N Channel MOSFET TrenchFET Power Device PJSEMI PJM2300NSA Ideal for Load Switching Applications
Key Attributes
Model Number:
PJM2300NSA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 N-channel
Input Capacitance(Ciss):
523pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
PJM2300NSA
Package:
SOT-23
Product Description
Product Overview
The PJM2300NSA is an N-Channel MOSFET featuring TrenchFET technology, offering excellent RDS(on) and low gate charge. It is designed for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Pingjingsemi
- Part Number: PJM2300NSA
- Technology: TrenchFET Power MOSFET
- Package: SOT-23
- Marking: M02
- Revision: 1.0
- Date: Jan-2019
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA =25 | 20 | V | ||
| Gate-Source Voltage | VGS | TA =25 | ±12 | V | ||
| Continuous Drain Current | ID | TA =25 | 4.5 | A | ||
| Pulsed Drain Current | IDM | Note1 | 18 | A | ||
| Power Dissipation | PD | TA =25 | 0.35 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RθJA | Note2 | 357 | °C/W | ||
| Static Parameters | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250µA, VGS=0V | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | -- | 1 | µA | |
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=±12V | -- | ±100 | nA | |
| Threshold Voltage | VGS(th) | VDS=VGS, ID=250µA | 0.45 | -- | 1 | V |
| RDS(ON) | RDS(ON) | VGS=4.5V, ID=3A | -- | 32 | mΩ | |
| RDS(ON) | RDS(ON) | VGS=2.5V, ID=2A | -- | 40 | mΩ | |
| RDS(ON) | RDS(ON) | VGS=1.8V, ID=2A | -- | 70 | mΩ | |
| Forward Transconductance | gFS | VDS=10V, ID=6A | 5 | -- | S | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=8V, f=1MHz | 523 | -- | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=8V, f=1MHz | 99 | -- | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=8V, f=1MHz | 75 | -- | pF | |
| Switching Parameters | ||||||
| Total gate charge | Qg | VGS=4.5V, VDS=10V,ID=6A | 6.4 | 8.2 | nC | |
| Gate Source Charge | Qgs | VGS=4.5V, VDS=10V,ID=6A | 1.8 | 2.3 | nC | |
| Gate Drain Charge | Qgd | VGS=4.5V, VDS=10V,ID=6A | 1.3 | 1.9 | nC | |
| Turn-On Delay Time | tD(on) | VDS=10V, VGS=4.5V ID=1A, RGEN=6Ω | 10.5 | 21 | ns | |
| Turn-On Rise Time | tr | VDS=10V, VGS=4.5V ID=1A, RGEN=6Ω | 4.5 | 9 | ns | |
| Turn-Off Delay Time | tD(off) | VDS=10V, VGS=4.5V ID=1A, RGEN=6Ω | 27.5 | 55 | ns | |
| Turn-Off Fall Time | tf | VDS=10V, VGS=4.5V ID=1A, RGEN=6Ω | 4.3 | 8.6 | ns | |
| Drain-Source Diode Characteristics | ||||||
| Body Diode Forward Voltage | VSD | IS=1.7A, VGS=0V | -- | 1.2 | V | |
2410121933_PJSEMI-PJM2300NSA_C411711.pdf
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