ORIENTAL SEMI SFS08R08DF Power MOSFET Featuring Low Vth and Low Gate Charge for Power Management Solutions
Key Attributes
Model Number:
SFS08R08DF
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
64A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@10V,12A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
53.9pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.028nF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
28.9nC@10V
Mfr. Part #:
SFS08R08DF
Package:
TO-252
Product Description
Product Overview
The SFS08R08DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. Specifically optimized for synchronous rectification systems with low driving voltage, this MOSFET offers low Vth. It is suitable for applications including PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Technology: Enhancement Mode N-Channel Power MOSFET
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| General Description & Key Performance Parameters | ||||
| Drain source voltage (min @ Tj(max)) | VDS, min | 80 | V | |
| Pulse drain current | ID, pulse | 192 | A | |
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON) max | 8 | m | VGS=10V |
| Total gate charge | Qg | 28.9 | nC | |
| Absolute Maximum Ratings | ||||
| Drain source voltage | VDS | 80 | V | Tj=25C unless otherwise noted |
| Gate source voltage | VGS | 20 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 64 | A | 1), TC=25 C |
| Pulsed drain current (TC=25 C) | ID, pulse | 192 | A | 2), TC=25 C |
| Continuous diode forward current (TC=25 C) | IS | 64 | A | 1), TC=25 C |
| Diode pulsed current (TC=25 C) | IS, Pulse | 192 | A | 2), TC=25 C |
| Power dissipation (TC=25 C) | PD | 87 | W | 3), TC=25 C |
| Single pulsed avalanche energy | EAS | 25 | mJ | 5) |
| Operation and storage temperature | TstgTj | -55 to 175 | C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction-case | RJC | 1.72 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | 4) |
| Electrical Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 6.2 - 8 | m | VGS=10 V, ID=12 A |
| Drain-source on-state resistance | RDS(ON) | 7.8 - 10 | m | VGS=4.5 V, ID=9 A |
| Gate-source leakage current | IGSS | 100 | nA | VGS=20 V |
| Gate-source leakage current | IGSS | -100 | nA | VGS=-20 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=80 V, VGS=0 V |
| Gate resistance | RG | 3.3 | =1 MHz, Open drain | |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 2028 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Output capacitance | Coss | 717 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Reverse transfer capacitance | Crss | 53.9 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Turn-on delay time | td(on) | 22.2 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A |
| Rise time | tr | 6.3 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A |
| Turn-off delay time | td(off) | 47.5 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A |
| Fall time | tf | 8.8 | ns | VGS=10 V, VDS=50 V, RG=2.5 , ID=25 A |
| Gate Charge Characteristics | ||||
| Total gate charge | Qg | 28.9 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-source charge | Qgs | 5.4 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate-drain charge | Qgd | 4.9 | nC | VGS=10 V, VDS=50 V, ID=25 A |
| Gate plateau voltage | Vplateau | 3.5 | V | VGS=10 V, VDS=50 V, ID=25 A |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | 1.3 | V | IS=12 A, VGS=0 V |
| Reverse recovery time | trr | 51.3 | ns | VR=50 V, IS=25 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 60.6 | nC | VR=50 V, IS=25 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 2 | A | VR=50 V, IS=25 A, di/dt=100 A/s |
| Package & Pin Information | ||||
| Product Name | SFS08R08DF | TO252 | ||
| Package Marking | SFS08R08D | |||
| Package Outline Dimensions (TO252-J) | ||||
| Symbol | mm (Min) | mm (Nom) | mm (Max) | |
| A | 2.20 | 2.30 | 2.38 | |
| A1 | 0.00 | - | 0.10 | |
| A2 | 0.90 | 1.01 | 1.10 | |
| b | 0.72 | - | 0.85 | |
| b1 | 0.71 | 0.76 | 0.81 | |
| b2 | 0.72 | - | 0.90 | |
| b3 | 5.13 | 5.33 | 5.46 | |
| c | 0.47 | - | 0.60 | |
| c1 | 0.46 | 0.51 | 0.56 | |
| c2 | 0.47 | - | 0.60 | |
| D | 6.00 | 6.10 | 6.20 | |
| D1 | 5.25 | - | - | |
| E | 6.50 | 6.60 | 6.70 | |
| E1 | 4.70 | - | - | |
| e | 2.186 | 2.286 | 2.386 | |
| H | 9.80 | 10.10 | 10.40 | |
| L | 1.40 | 1.50 | 1.70 | |
| L1 | 2.90 | REF | - | |
| L2 | 0.508 | BSC | - | |
| L3 | 0.90 | - | 1.25 | |
| L4 | 0.60 | 0.80 | 1.00 | |
| L5 | 0.15 | - | 0.75 | |
| L6 | 1.80 | REF | - | |
| 0 | - | 8 | ||
| 1 | 5 | 7 | 9 | |
| 2 | 5 | 7 | 9 | |
| Ordering Information | ||||
| Package Type | Units/ Reel | Reels / Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box |
| TO252-J | 2500 | 2 | 5000 | 5 |
2410121806_ORIENTAL-SEMI-SFS08R08DF_C5175408.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
