Load Switching Power MOSFET PJSEMI PJM08P40PA with P Channel Enhancement Mode 40V VDS and 8A Drain Current
Key Attributes
Model Number:
PJM08P40PA
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
86pF
Number:
1 P-Channel
Output Capacitance(Coss):
116pF
Input Capacitance(Ciss):
1.392nF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
11.5nC@4.5V
Mfr. Part #:
PJM08P40PA
Package:
SOP-8
Product Description
Product Overview
The PJM08P40PA is a P-Channel Enhancement Mode Power MOSFET designed for load switching, PWM applications, and power management. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, as well as halogen and antimony free. This MOSFET offers a VDS of -40V and ID of -8A, with low on-resistance values.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 8 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 30 | A | ||
| Maximum Power Dissipation | PD | 1.8 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 42 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note3 | 69 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-40V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note4,VDS=VGS,ID=-250μA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note4,VGS=-10V,ID=-8A | -- | 25 | 35 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note4,VGS=-4.5V,ID=-8A | -- | 32 | 45 | mΩ |
| Forward Transconductance | gFS | Note4,VDS=-5V,ID=-1A | -- | 6 | -- | S |
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | -- | 1392 | -- | pF |
| Output Capacitance | Coss | VDS=-20V,VGS=0V,f=1MHz | -- | 116 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-20V,VGS=0V,f=1MHz | -- | 98 | -- | pF |
| Total Gate Charge | Qg | VDS=-15V,ID=-1A, VGS=-4.5V | -- | 11.5 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V,ID=-1A, VGS=-4.5V | -- | 3.5 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-15V,ID=-1A, VGS=-4.5V | -- | 3.3 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | -- | 22 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | -- | 15.7 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | -- | 59 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, ID=-1A, VGS=-10V, RGEN=3.3Ω | -- | 5.5 | -- | nS |
| Diode Forward Voltage | -VSD | Note4,VGS=0V,IS=-8A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note3 | -- | -- | 8 | A |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 12 | -- | Ω |
2405221106_PJSEMI-PJM08P40PA_C22438605.pdf
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