Power MOSFET PJSEMI PJM12P20DF offers low on resistance and performance for power management circuits
Key Attributes
Model Number:
PJM12P20DF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
231pF
Number:
1 P-Channel
Pd - Power Dissipation:
4.5W
Input Capacitance(Ciss):
2nF
Gate Charge(Qg):
15.3nC@4.5V
Mfr. Part #:
PJM12P20DF
Package:
DFN2x2-6L
Product Description
Product Overview
The PJM12P20DF is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features low gate charge and low on-resistance (RDS(ON)), making it suitable for applications requiring high performance and reduced power loss. Its robust design and specific electrical characteristics make it ideal for load switching and PWM applications.
Product Attributes
- Brand: PingJingSemi
- Part Number: PJM12P20DF
- Package Type: DFN2x2-6L
- Marking Code: 12P20
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | -ID | 12 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 48 | A | ||
| Maximum Power Dissipation | PD | 4.5 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Case | RθJC | Note2 | 27.8 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250µA | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250µA | 0.4 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-10A | -- | 17 | 22 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-2.5V,ID=-5A | -- | 22 | 30 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-6.7A | -- | 18 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 2000 | -- | pF |
| Output Capacitance | Coss | -- | 242 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 231 | -- | pF | |
| Turn-on Delay Time | td(on) | VDS=-10V, ID=-12A,VGEN=-4.5V,RG=2.5Ω | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | -- | 31 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 28 | -- | nS | |
| Turn-off Fall Time | tf | -- | 8 | -- | nS | |
| Total Gate Charge | Qg | VDS=-10V,ID=-6A, VGS=-4.5V | -- | 15.3 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2.2 | -- | nC | |
| Gate-Drain Charge | Qg | -- | 4.4 | -- | nC | |
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-12A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 12 | A |
2406251627_PJSEMI-PJM12P20DF_C22470326.pdf
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