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quality Low On Resistance Enhancement Mode MOSFET ORIENTAL SEMI OSG70R750DF for Power Conversion Applications factory
quality Low On Resistance Enhancement Mode MOSFET ORIENTAL SEMI OSG70R750DF for Power Conversion Applications factory

Low On Resistance Enhancement Mode MOSFET ORIENTAL SEMI OSG70R750DF for Power Conversion Applications

Key Attributes
Model Number: OSG70R750DF
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.44pF@50V
Number:
-
Input Capacitance(Ciss):
459pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
9.2nC@10V
Mfr. Part #:
OSG70R750DF
Package:
TO-252
Product Description

Product Overview

The OSG70R750DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it optimized for extreme switching performance and high power density applications. Ideal for meeting the highest efficiency standards, it is suitable for PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS applications.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: GreenMOS
  • Product Name: OSG70R750DF
  • Package Type: TO252
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source breakdown voltage BVDSS 700 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 2.0 - 4.0 V VDS=VGS, ID=250 A
Drain-source on- state resistance RDS(ON) 0.65 - 0.75 VGS=10 V, ID=4 A
Gate-source leakage current IGSS 100 nA VGS=30 V
Drain-source leakage current IDSS 1 A VDS=700 V, VGS=0 V
Input capacitance Ciss 459 pF VGS=0 V, VDS=50 V, =1 MHz
Output capacitance Coss 33.8 pF VGS=0 V, VDS=50 V, =1 MHz
Reverse transfer capacitance Crss 1.44 pF VGS=0 V, VDS=50 V, =1 MHz
Turn-on delay time td(on) 17 ns VGS=10 V, VDS=400 V, RG=25 , ID=4 A
Rise time tr 10.1 ns VGS=10 V, VDS=400 V, RG=25 , ID=4 A
Turn-off delay time td(off) 28.9 ns VGS=10 V, VDS=400 V, RG=25 , ID=4 A
Fall time tf 23.6 ns VGS=10 V, VDS=400 V, RG=25 , ID=4 A
Total gate charge Qg 9.2 nC VGS=10 V, VDS=400 V, ID=4 A
Gate-source charge Qgs 2.4 nC VGS=10 V, VDS=400 V, ID=4 A
Gate-drain charge Qgd 3.5 nC VGS=10 V, VDS=400 V, ID=4 A
Gate plateau voltage Vplateau 5.6 V VGS=10 V, VDS=400 V, ID=4 A
Diode forward voltage VSD 1.3 V IS=4 A, VGS=0 V
Reverse recovery time trr 212 ns VR=400 V, IS=4 A, di/dt=100 A/s
Reverse recovery charge Qrr 1.7 C VR=400 V, IS=4 A, di/dt=100 A/s
Peak reverse recovery current Irrm 14.2 A VR=400 V, IS=4 A, di/dt=100 A/s
Continuous drain current ID 7 A TC=25 C
Continuous drain current ID 4.4 A TC=100 C
Pulsed drain current ID, pulse 21 A TC=25 C
Continuous diode forward current IS 7 A TC=25 C
Diode pulsed current IS, pulse 21 A TC=25 C
Power dissipation PD 63 W TC=25 C
Single pulsed avalanche energy EAS 190 mJ VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 C
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0480 V
Reverse diode dv/dt dv/dt 15 V/ns VDS=0480 V, ISDID
Operation and storage temperature Tstg, Tj -55 to 150 C
Thermal resistance, junction-case RJC 2 C/W
Thermal resistance, junction-ambient RJA 62 C/W Device mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25 C
Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box
TO252-C 2500 2 5000 5 25000
TO252-J 2500 2 5000 5 25000

2410121617_ORIENTAL-SEMI-OSG70R750DF_C2762907.pdf
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