Power MOSFET ORIENTAL SEMI OSG65R580DEF featuring GreenMOS E series technology for power management
Key Attributes
Model Number:
OSG65R580DEF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
580mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.8pF@50V
Number:
-
Input Capacitance(Ciss):
587pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
12.4nC@10V
Mfr. Part #:
OSG65R580DEF
Package:
TO-252-2
Product Description
Product Overview
The OSG65R580DEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. Utilizing charge balance technology, it offers outstanding low on-resistance and lower gate charge, minimizing conduction loss and providing superior switching performance with robust avalanche capability. This series is optimized for balanced switching characteristics, achieving a compromise between EMI and efficiency, enabling power supply systems to reach high efficiency while meeting EMI standards. It is ideal for applications such as LED lighting, chargers, adapters, TV power, telecom power, server power, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS E series
- Technology: Charge Balance Technology
- Material: MOSFET
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 700 | V | |
| Pulse drain current | ID, pulse | 24 | A | |
| RDS(ON), max @ VGS=10V | RDS(ON), max @ VGS=10V | 580 | m | |
| Total gate charge | Qg | 12.4 | nC | |
| Drain-source voltage | VDS | 650 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 8 | A | Tj=25C unless otherwise noted |
| Continuous drain current (TC=100 C) | ID | 5 | A | Tj=25C unless otherwise noted |
| Pulsed drain current (TC=25 C) | ID, pulse | 24 | A | Tj=25C unless otherwise noted |
| Continuous diode forward current (TC=25 C) | IS | 8 | A | Tj=25C unless otherwise noted |
| Diode pulsed current (TC=25 C) | IS, pulse | 24 | A | Tj=25C unless otherwise noted |
| Power dissipation (TC=25 C) | PD | 63 | W | Tj=25C unless otherwise noted |
| Single pulsed avalanche energy (5) | EAS | 150 | mJ | VDD=50 V, VGS=10 V, L=10.8 mH, starting Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 2 | C/W | |
| Thermal resistance, junction-ambient (4) | RJA | 62 | C/W | Measured with device mounted on 1 in FR-4 board with 2oz. Copper, in still air environment with Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 650 | V | VGS=0 V, ID=250 A |
| Drain-source breakdown voltage (Tj=150 C) | BVDSS | 700-750 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.0-4.0 | V | VDS=VGS, ID=250 A |
| Drain-source on-state resistance | RDS(ON) | 0.48-0.58 | VGS=10 V, ID=4 A | |
| Drain-source on-state resistance (Tj=150 C) | RDS(ON) | 1.27 | VGS=10 V, ID=4 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 1 | A | VDS=650 V, VGS=0 V |
| Input capacitance | Ciss | 587 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Output capacitance | Coss | 42.1 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Reverse transfer capacitance | Crss | 1.8 | pF | VGS=0 V, VDS=50 V, =1 MHz |
| Turn-on delay time | td(on) | 22.4 | ns | VGS=10 V, VDS=400 V, RG=10 , ID=8 A |
| Rise time | tr | 16.5 | ns | VGS=10 V, VDS=400 V, RG=10 , ID=8 A |
| Turn-off delay time | td(off) | 33.4 | ns | VGS=10 V, VDS=400 V, RG=10 , ID=8 A |
| Fall time | tf | 5.1 | ns | VGS=10 V, VDS=400 V, RG=10 , ID=8 A |
| Total gate charge | Qg | 12.4 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate-source charge | Qgs | 3.2 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate-drain charge | Qgd | 5.0 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate plateau voltage | Vplateau | 6.0 | V | VGS=10 V, VDS=400 V, ID=8 A |
| Diode forward voltage | VSD | 1.2 | V | IS=8 A, VGS=0 V |
| Reverse recovery time | trr | 272.2 | ns | VR=400 V, IS=8 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 2.5 | C | VR=400 V, IS=8 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 20.7 | A | VR=400 V, IS=8 A, di/dt=100 A/s |
| Product Name | OSG65R580DEF | |||
| Package Marking | OSG65R580DE | TO252 |
Package Information (TO252-C):
| Symbol | mm | Min | Nom | Max |
|---|---|---|---|---|
| A | 2.20 | 2.30 | 2.38 | |
| A1 | 0.00 | - | 0.20 | |
| A2 | 0.97 | 1.07 | 1.17 | |
| b | 0.68 | 0.78 | 0.90 | |
| b3 | 5.20 | 5.33 | 5.46 | |
| c | 0.43 | 0.53 | 0.61 | |
| D | 5.98 | 6.10 | 6.22 | |
| D1 | 5.30 | - | - | |
| E | 6.40 | 6.60 | 6.73 | |
| E1 | 4.63 | - | - | |
| e | BSC | 2.286 | - | - |
| H | 9.40 | 10.10 | 10.50 | |
| L | 1.38 | 1.50 | 1.75 | |
| L1 | REF | 2.90 | - | - |
| L2 | BSC | 0.51 | - | - |
| L3 | 0.88 | - | 1.28 | |
| L4 | 0.50 | - | 1.00 | |
| 0 | - | 8 |
Ordering Information:
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO252-C | 2500 | 2 | 5000 | 5 | 25000 |
| TO252-J | 2500 | 2 | 5000 | 5 | 25000 |
| TO252-S | 2500 | 1 | 2500 | 10 | 25000 |
2411220144_ORIENTAL-SEMI-OSG65R580DEF_C2762905.pdf
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