Power Management N Channel MOSFET Featuring PJSEMI PJ8205 with High Current Handling Capability
Key Attributes
Model Number:
PJ8205
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
2 N-Channel
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
PJ8205
Package:
SOT-23-6
Product Description
Product Overview
The PJ8205 is an N-Channel Power MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers high power and current handling capability, making it suitable for various power management applications.
Product Attributes
- Brand: Pingjing Semiconductor
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TC =25 | 5 | A | ||
| Pulsed Drain Current | IDM | Note1 | 6 | A | ||
| Power Dissipation | PD | TC =25, Surface Mounted on FR4 Board, t 10 sec. Note2 | 2 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | 150 | C | ||
| Static Parameters | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=12V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID= 250A Note3 | 0.5 | -- | -- | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A Note3 | -- | -- | 10 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5A Note3 | -- | -- | 10 | m |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | -- | -- | 150 | pF |
| Output Capacitance | Coss | VDS=10V, VGS=0V, f=1MHz | -- | -- | 75 | pF |
| Reverse Transfer Capacitance | Crss | VDS=10V, VGS=0V, f=1MHz | -- | -- | 25 | pF |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 5 | nC |
| Gate Source Charge | Qgs | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 1.5 | nC |
| Gate Drain Charge | Qg d | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 1 | nC |
| Turn-On Delay Time | tD(on) | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 5 | ns |
| Turn-On Rise Time | tr | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 10 | ns |
| Turn-Off Delay Time | tD(off) | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 15 | ns |
| Turn-Off Fall Time | tf | VDS=10V, ID=5A, VGS=4.5V | -- | -- | 10 | ns |
| Source-Drain Diode Parameters | ||||||
| Body Diode Forward Voltage | VSD | IS=5A, VGS=0V | -- | -- | 1.2 | V |
| Body Diode Continuous Source Current | IS | 5 | A | |||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C/W | |||
| Thermal Resistance, Junction-to-Case | RJC | 25 | C/W | |||
2410121742_PJSEMI-PJ8205_C469391.pdf
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