P Channel Enhancement Mode Power MOSFET PJSEMI PJM05P60SC with Ultra Low Drain Source On Resistance
Key Attributes
Model Number:
PJM05P60SC
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 P-Channel
Output Capacitance(Coss):
85pF
Input Capacitance(Ciss):
930pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
PJM05P60SC
Package:
SOT-23-3
Product Description
PJM05P60SC P-Channel Enhancement Mode Power MOSFET
The PJM05P60SC is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management. It features a high-density cell design for ultra-low RDS(on), making it suitable for load switching and PWM applications. The SOT-23-3 package offers a surface-mount solution.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23-3
- Marking Code: KM
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 1 | 1.5 | 2 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-4A | -- | 55 | 70 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-3A | -- | 65 | 80 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-1A | -- | 6 | -- | S |
| Input Capacitance | Ciss | VDS=-30V,VGS=0V,f=1MHz | -- | 930 | -- | pF |
| Output Capacitance | Coss | VDS=-30V,VGS=0V,f=1MHz | -- | 85 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-30V,VGS=0V,f=1MHz | -- | 35 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=-30V, ,VGS=-10V, RGEN=3,RL=7.5 | -- | 8 | -- | nS |
| Turn-on Rise Time | tr | VDD=-30V, ,VGS=-10V, RGEN=3,RL=7.5 | -- | 4 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-30V, ,VGS=-10V, RGEN=3,RL=7.5 | -- | 32 | -- | nS |
| Turn-off Fall Time | tf | VDD=-30V, ,VGS=-10V, RGEN=3,RL=7.5 | -- | 7 | -- | nS |
| Total Gate Charge | Qg | VDS=-30V,ID=-10A, VGS=-4V | -- | 25 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-30V,ID=-10A, VGS=-4V | -- | 3 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=-30V,ID=-10A, VGS=-4V | -- | 7 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-5A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V,IS=-5A | -- | -- | 5 | A |
| Drain-Source Voltage | -VDS | -- | -- | -- | 60 | V |
| Gate-Source Voltage | VGS | -- | -- | -- | 20 | V |
| Drain Current-Continuous | -ID | -- | -- | -- | 5 | A |
| Drain Current-Pulsed | -IDM | Note1 | -- | -- | 16 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 1.5 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Maximum Junction-to-Case | RJC | Note2 | -- | 83.3 | -- | C/W |
2410221617_PJSEMI-PJM05P60SC_C41784031.pdf
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