N Channel Enhancement Mode MOSFET PJSEMI PJM2312JNSA with Low RDS on and 6A Continuous Drain Current
Key Attributes
Model Number:
PJM2312JNSA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6A
RDS(on):
25mΩ@4.5V,4.5A
Reverse Transfer Capacitance (Crss@Vds):
90pF@8V
Number:
1 N-channel
Input Capacitance(Ciss):
688pF@8V
Pd - Power Dissipation:
1W
Gate Charge(Qg):
9.3nC@4.5V
Mfr. Part #:
PJM2312JNSA
Package:
SOT-23-3
Product Description
Product Overview
The PJM2312JNSA is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology. It is designed for applications such as load switching, PWM applications, and power management. The device is RoHS and Reach compliant, and is Halogen and Antimony Free. It offers a VDS of 20V and ID of 6A, with low RDS(on) values.
Product Attributes
- Brand: Pingjingsemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 6 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 1 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 125 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.45 | 0.7 | 1 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V,ID=4.5A | 18 | 25 | mΩ | |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=2.5V,ID=4A | 21 | 35 | mΩ | |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | 5 | S | ||
| Input Capacitance | Ciss | VDS=8V,VGS=0V,f=1MHz | 688 | pF | ||
| Output Capacitance | Coss | 102 | pF | |||
| Reverse Transfer Capacitance | Crss | 90 | pF | |||
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | 32 | Ω | ||
| Total Gate Charge | Qg | VDS=10V,ID=3A, VGS=0V~4.5V | 9.3 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | nC | |||
| Gate-Drain Charge | Qgd | 2 | nC | |||
| Turn-on Delay Time | td(on) | VDD=10V,ID=3A, VGS=4.5V,RGEN=3Ω | 4 | nS | ||
| Turn-on Rise Time | tr | 18 | nS | |||
| Turn-off Delay Time | td(off) | 106 | nS | |||
| Turn-off Fall Time | tf | 64 | nS | |||
| Diode Forward Voltage | VSD | Note3,VGS=0V,IS=6A | 1.2 | V | ||
| Diode Forward Current | IS | Note2 | 6 | A | ||
2412311540_PJSEMI-PJM2312JNSA_C42431770.pdf
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