P Channel MOSFET PJSEMI PJM04P30SQ with Excellent Thermal Performance and Low Gate Threshold Voltage
Key Attributes
Model Number:
PJM04P30SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
880pF@15V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
8.5nC@10V
Mfr. Part #:
PJM04P30SQ
Package:
SOT-89
Product Description
Product Overview
The PJM04P30SQ is a P-Channel Enhancement Mode Power MOSFET designed for power switching applications. It features a high-density cell design for ultra-low RDS(on) and an excellent package for good heat dissipation. Key specifications include VDS of -30V, ID of -4.1A, and RDS(on) < 65m @VGS= -10V.
Product Attributes
- Brand: PingJingSemi
- Package Type: SOT-89
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | VDS=VGS,ID=-250A | 0.7 | 0.9 | 1.3 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=-10V,ID=-4.1A | -- | 48 | 65 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=-4.5V,ID=-3A | -- | 56 | 85 | m |
| Forward Transconductance | gFS | VDS=-5V,ID=-4.1A | -- | 10 | -- | S |
| Input Capacitance | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 880 | -- | pF |
| Output Capacitance | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 105 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 65 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 3 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 30 | -- | nS |
| Turn-off Fall Time | tf | VDD=- 15V,ID=-4.1A, VGS=-10V,RG=6 | -- | 12 | -- | nS |
| Total Gate Charge | Qg | VDS=-15V, ID= -4.1A,VGS=-4.5V | -- | 8.5 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-15V, ID= -4.1A,VGS=-4.5V | -- | 1.8 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-15V, ID= -4.1A,VGS=-4.5V | -- | 2.7 | -- | nC |
| Diode Forward Voltage | -VSD | VGS=0V,IS=-4.1A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | VGS=0V,IS=-4.1A | -- | -- | 4.1 | A |
2412050943_PJSEMI-PJM04P30SQ_C42405714.pdf
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