switching OSEN OSD60N02T Low Voltage N channel MOSFET with high power dissipation and current rating
Key Attributes
Model Number:
OSD60N02T
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
RDS(on):
7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
255pF
Output Capacitance(Coss):
300pF
Input Capacitance(Ciss):
1.605nF
Pd - Power Dissipation:
60W
Mfr. Part #:
OSD60N02T
Package:
TO-252
Product Description
Product Overview
The OSEN OSD60N02T is a Low Voltage N-channel MOSFET designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification applications.
Product Attributes
- Brand: OSEN
- Product Order Number: OSD60N02T
- Revision: 21.2.10
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage | 20 | V | |
| VGS | Gate-Source Voltage-Continuous | 10 | V | |
| ID | Drain Current-Continuous (Note 2) | 60 | A | |
| IDM | Drain Current-Single Pulsed (Note 1) | 240 | A | |
| PD | Power Dissipation (Note 2) | 60 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| Electrical Characteristics | ||||
| Static Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage (Note 1) | 20 | V | ID=250AVGS=0V |
| VGS(th) | Gate Threshold Voltage | 0.4 | 0.7 | 1.1 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- | 4.7 | 7 | m | VGS=4.5VID=20A |
| IGSS | Gate-Body Leakage Current | -- | -- | 100 | nA | VGS=10VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- | -- | 1 | A | VDS=20VVGS=0 |
| gfs | Forward Transconductance | -- | 15 | -- | S | VDS=15VID=10A |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time | -- | 15 | -- | ns | VGS=4.5V, VDS=10V,ID=20A RG=3 |
| Tr | Rise Time | -- | 50 | -- | ns | |
| Td(off) | Turn-Off Delay Time | -- | 75 | -- | ns | |
| Tf | Fall Time | -- | 25 | -- | ns | |
| Qg | Total Gate Charge | -- | 45 | -- | nC | VDS=10VGS=10V ID=60A |
| Qgs | Gate-Source Charge | -- | 2.7 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 11 | -- | nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | -- | 1605 | -- | pF | VDS=10VVGS=0 f=1MHz |
| Coss | Output Capacitance | -- | 300 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 255 | -- | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- | -- | 60 | A | |
| VSD | Diode Forward On-Voltage | -- | -- | 1.2 | V | IS=30AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- | -- | 2.08 | /W | |
2411192315_OSEN-OSD60N02T_C20607771.pdf
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