power management device OSEN OSPF28N50 500V N channel MOSFET with fast switching and rugged design
Key Attributes
Model Number:
OSPF28N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
28A
RDS(on):
170mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Input Capacitance(Ciss):
4.5nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
OSPF28N50
Package:
TO-220F
Product Description
Product Overview
The OSPF28N50 is a 500V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and improved dv/dt capability for enhanced ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSPF28N50
- Package: TO-220F
Technical Specifications
| Parameters | Unit | Ratings | Conditions |
| Drain-Source Voltage (VDSS) | V | 500 | |
| Gate-Source Voltage-Continuous (VGS) | V | 30 | |
| Drain Current-Continuous (ID) (Note 2) | A | 28 | |
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 112 | |
| Power Dissipation (PD) (Note 2) | W | 75 | |
| Max.Operating junction temperature (Tj Max.) | 150 | ||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | 500 | ID=250AVGS=0VTJ=25C |
| Gate Threshold Voltage (VGS(th)) | V | 2 -- 4.0 | VDS=VGSID=250A |
| Drain-Source On-Resistance (RDS(on)) | -- 0.17 -- | VGS=10VID=14A | |
| Gate-Body Leakage Current (IGSS) | nA | -- -- 100 | VGS=30VVDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | A | -- -- 1 | VDS=500VVGS=0 |
| Forward Transconductance (gfs) | S | -- 25 -- | VDS=40VID=14A |
| Turn-On Delay Time (Td(on)) | ns | -- 40 -- | VDS=400VID=28ARG=10Note 2 |
| Rise Time (Tr) | ns | -- 70 -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- 170 -- | |
| Fall Time (Tf) | ns | -- 55 -- | |
| Total Gate Charge (Qg) | nC | -- 110 -- | VDS=400V VGS=10V ID=28ANote 2 |
| Gate-Source Charge (Qgs) | nC | -- 15 -- | |
| Gate-Drain Charge (Qgd) | nC | -- 40 -- | |
| Input Capacitance (Ciss) | pF | -- 4500 -- | VDS=25VVGS=0 f=1MHz |
| Output Capacitance (Coss) | pF | -- 320 -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- 20 -- | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- -- 28 | |
| Diode Forward On-Voltage (VSD) | V | -- -- 1.4 | IS=14AVGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- -- 1.67 |
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%.
2410121732_OSEN-OSPF28N50_C20607835.pdf
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