N Channel Enhancement Mode Power MOSFET PJSEMI PJM60N20TE with Trench Technology and RoHS Compliance

Key Attributes
Model Number: PJM60N20TE
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
213pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.563nF@10V
Pd - Power Dissipation:
37W
Gate Charge(Qg):
23nC@4.5V
Mfr. Part #:
PJM60N20TE
Package:
TO-252
Product Description

Product Overview

The PJM60N20TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology, 100% avalanche tested, and RoHS compliant. It is halogen and antimony free, with a moisture sensitivity level of 3. This MOSFET is ideal for load switch and PWM applications, as well as general power management.

Product Attributes

  • Brand: PingJingSemi
  • Certifications: RoHS Compliant, Halogen and Antimony Free
  • Moisture Sensitivity Level: 3

Technical Specifications

ParameterSymbolTest ConditionMin.Typ.Max.Unit
Static CharacteristicsV(BR)DSSVGS=0V,ID=250A20----V
IDSSVDS=20V,VGS=0V----1A
IGSSVGS=12V,VDS=0V----100nA
VGS(th)VDS=VGS,ID=250A0.40.651V
RDS(on)VGS=4.5V,ID=25A--4.96m
VGS=2.5V,ID=15A--6.88.5m
gFSVDS=5V,ID=2A--11--S
Dynamic CharacteristicsCissVDS=10V,VGS=0V,f=1MHz--1563--pF
CossVDS=10V,VGS=0V,f=1MHz--234--pF
CrssVDS=10V,VGS=0V,f=1MHz--213--pF
Switching Characteristicstd(on)VDD=10V, ID=20A, VGS=4.5V, RGEN=3--12--nS
trVDD=10V, ID=20A, VGS=4.5V, RGEN=3--33--nS
td(off)VDD=10V, ID=20A, VGS=4.5V, RGEN=3--48--nS
tfVDD=10V, ID=20A, VGS=4.5V, RGEN=3--95--nS
Source-Drain Diode CharacteristicsVSDVGS=0V,IS=30A----1.2V
IS------60A
Absolute Maximum RatingsVDS------20V
VGS----12--V
ID------60A
Thermal CharacteristicsRJC----3.4--C/W

2411121111_PJSEMI-PJM60N20TE_C41398498.pdf

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