Power N Channel Silicon Carbide Cascode JFET TO247 3 onsemi UF3C065040K3S 650 Volt 42 Milliohm Device
Key Attributes
Model Number:
UF3C065040K3S
Product Custom Attributes
Mfr. Part #:
UF3C065040K3S
Package:
TO-247-3
Product Description
Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 42 mohm UF3C065040K3S
The UF3C065040K3S is a 650 V, 42 m Silicon Carbide (SiC) Cascode JFET from onsemi, featuring a co-packaged G3 SiC JFET with a cascode-optimized MOSFET. This design provides ultra-low gate charge and excellent reverse recovery characteristics, making it ideal for switching inductive loads with recommended RC-snubbers and applications requiring standard gate drive. It offers very low switching losses and is Pb-Free, Halogen Free, and RoHS Compliant.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
- Package: TO247-3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-source Voltage | VDS | 650 | V | |||
| Gate-source Voltage | VGS | DC | -25 | +25 | V | |
| Continuous Drain Current (Note 1) | ID | TC = 25 C | 54 | A | ||
| Continuous Drain Current (Note 1) | ID | TC = 100 C | 40 | A | ||
| Pulsed Drain Current (Note 2) | IDM | TC = 25 C | 125 | A | ||
| Single Pulsed Avalanche Energy (Note 3) | EAS | L = 15 mH, IAS = 3.19 A | 76 | mJ | ||
| Power Dissipation | Ptot | TC = 25 C | 326 | W | ||
| Maximum Junction Temperature | TJ,max | 175 | C | |||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | C | ||
| Max. Lead Temperature for Soldering, 1/8 from Case for 5 Seconds | TL | 250 | C | |||
| THERMAL CHARACTERISTICS | ||||||
| Thermal Resistance, Junction-to-Case | R JC | 0.35 | 0.46 | C/W | ||
| ELECTRICAL CHARACTERISTICS (TJ = +25 C unless otherwise specified) | ||||||
| TYPICAL PERFORMANCE - STATIC | ||||||
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 650 | V | ||
| Total Drain Leakage Current | IDSS | VDS = 650 V, VGS = 0 V, TJ = 25 C | 0.7 | 150 | A | |
| Total Drain Leakage Current | IDSS | VDS = 650 V, VGS = 0 V, TJ = 175C | 10 | A | ||
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 C, VGS = 20 V/ +20 V | 6 | 20 | A | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 25 C | 42 | 52 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 125 C | 59 | m | ||
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 40 A, TJ = 175 C | 78 | m | ||
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 | 5 | 6 | V |
| Gate Resistance | RG | f = 1 MHz, open drain | 4.5 | |||
| TYPICAL PERFORMANCE - REVERSE DIODE | ||||||
| Diode Continuous Forward Current (Note 4) | IS | TC = 25 C | 54 | A | ||
| Diode Pulse Current (Note 5) | IS,pulse | TC = 25 C | 125 | A | ||
| Forward Voltage | VFSD | VGS = 0 V, IF = 20 A, TJ = 25 C | 1.5 | 1.75 | V | |
| Forward Voltage | VFSD | VGS = 0 V, IS = 20 A, TJ = 175 C | 1.8 | V | ||
| Reverse Recovery Charge | Qrr | VDS = 400 V, IF = 40 A, VGS = 5 V, RG_EXT = 20 , di/dt = 1100 A/s, TJ = 25 C | 138 | nC | ||
| Reverse Recovery Time | trr | VDS = 400 V, IF = 40 A, VGS = 5 V, RG_EXT = 20 , di/dt = 1100 A/s, TJ = 25 C | 38 | ns | ||
| Reverse Recovery Charge | Qrr | VDS = 400 V, IF = 40 A, VGS = 5 V, RG_EXT = 20 , di/dt = 1100 A/s, TJ = 150 C | 137 | nC | ||
| Reverse Recovery Time | trr | VDS = 400 V, IF = 40 A, VGS = 5 V, RG_EXT = 20 , di/dt = 1100 A/s, TJ = 150 C | 38 | ns | ||
| TYPICAL PERFORMANCE - DYNAMIC | ||||||
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 1500 | pF | ||
| Output Capacitance | Coss | 200 | pF | |||
| Reverse Transfer Capacitance | Crss | 2.2 | pF | |||
| Effective Output Capacitance, Energy Related | Coss(er) | VDS = 0 V to 400 V, VGS = 0 V | 146 | pF | ||
| Effective Output Capacitance, Time Related | Coss(tr) | 325 | pF | |||
| Coss Stored Energy | Eoss | VDS = 400 V, VGS = 0 V | 11.7 | J | ||
| Total Gate Charge | QG | VDS = 400 V, ID = 40 A, VGS = 5 V to 15 V | 51 | nC | ||
| Gate-drain Charge | QGD | 11 | nC | |||
| Gate-source Charge | QGS | 19 | nC | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 40 A, Gate Driver =5 V to +15 V, Turn-on RG,EXT = 1.8 , Turn-off RG,EXT = 22 , Inductive Load, FWD: Same Device With VGS = 5 V, RG = 22 , RC Snubber: RS = 5 , CS = 150 pF, TJ = 25 C | 35 | ns | ||
| Rise Time | tr | 24 | ns | |||
| Turn-off Delay Time | td(off) | 57 | ns | |||
| Fall Time | tf | 14 | ns | |||
| Turn-on Energy Including RS Energy (Note 6) | EON | 500 | J | |||
| Turn-off Energy Including RS Energy (Note 6) | EOFF | 118 | J | |||
| Total Switching Energy Including RS Energy (Note 6) | ETOTAL | 618 | J | |||
| Snubber RS Energy During Turn-on | ERS_ON | 1.7 | J | |||
| Snubber RS Energy During Turn-off | ERS_OFF | 4.5 | J | |||
| Turn-on Delay Time | td(on) | VDS = 400 V, ID = 40 A, Gate Driver =5 V to +15 V, Turn-on RG,EXT = 1.8 , Turn-off RG,EXT = 22 , Inductive Load, FWD: Same Device With VGS = 5 V, RG = 22 , RC Snubber: RS = 5 , CS = 150 pF, TJ = 150 C | 35 | ns | ||
| Rise Time | tr | 22 | ns | |||
| Turn-off Delay Time | td(off) | 60 | ns | |||
| Fall Time | tf | 13 | ns | |||
| Turn-on Energy Including RS Energy (Note 6) | EON | 479 | J | |||
| Turn-off Energy Including RS Energy (Note 6) | EOFF | 124 | J | |||
| Total Switching Energy Including RS Energy (Note 6) | ETOTAL | 603 | J | |||
| Snubber RS Energy During Turn-on | ERS_ON | 1.8 | J | |||
| Snubber RS Energy During Turn-off | ERS_OFF | 5.3 | J | |||
Typical Applications
- EV Charging
- PV Inverters
- Switch Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
2509301015_onsemi-UF3C065040K3S_C45343116.pdf
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