P Channel Enhancement Transistor PJSEMI PJM3407PSA Designed for Power Switching and Load Control
Key Attributes
Model Number:
PJM3407PSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
60mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
1.4W
Mfr. Part #:
PJM3407PSA
Package:
SOT-23
Product Description
PJM3407PSA P-Channel Enhancement Field Effect Transistor
The PJM3407PSA is a P-channel enhancement mode field-effect transistor designed with a high-density cell structure for ultra-low on-resistance (RDS(on)). It offers low gate charge and is suitable for load switch and PWM applications. Key features include VDS=-30V, ID=-4.1A, and RDS(on)=50m (Typ.)@VGS=-10V.
Product Attributes
- Brand: Pingjingsemi
- Product Code: PJM3407PSA
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | -ID | 4.1 | A | |||
| Power Dissipation | PD | 1.4 | W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | 150 | °C | ||
| Thermal Characteristics | ||||||
| Maximum Junction-to-Ambient | RθJA | Note1 | 89 | °C/W | ||
| Static Characteristics | ||||||
| Drain-source breakdown voltage | -V(BR)DSS | VGS = 0V, ID =-250µA | 30 | V | ||
| Zero gate voltage drain current | -IDSS | VDS =-24V,VGS = 0V | 1 | µA | ||
| Gate-source leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-4.1A | 50 | 60 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3A | 68 | 87 | mΩ | |
| Gate threshold voltage | -VGS(th) | VDS =VGS, ID =-250µA | 1 | 1.4 | 3 | V |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V,f =1MHz | 700 | pF | ||
| Output capacitance | Coss | 120 | pF | |||
| Reverse transfer capacitance | Crss | 75 | pF | |||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω | 8.6 | ns | ||
| Turn-on rise time | tr | 5.0 | ns | |||
| Turn-off delay time | td(off) | 28.2 | ns | |||
| Turn-off fall time | tf | 13.5 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -1 | V | ||
| Forward tranconductance | gFS | VDS =-5V, ID =-4A | 5.5 | S | ||
2410121813_PJSEMI-PJM3407PSA_C411719.pdf
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