Intelligent power module onsemi NFCS1060L3TT combining high voltage driver and PFC SiC SBD for motor control
Key Attributes
Model Number:
NFCS1060L3TT
Product Custom Attributes
Mfr. Part #:
NFCS1060L3TT
Package:
SIP-35(56x25.8)
Product Description
Product Overview
The NFCS1060L3TT is a fully-integrated 2-in-1 PFC and inverter intelligent power module (IPM). It is designed for driving permanent magnet synchronous (PMSM), brushless-DC (BLDC), and AC asynchronous motors. The module features a high-voltage driver, six motor drive IGBTs, one PFC SJ-MOSFET, and one PFC SiC-SBD for rectifier, along with a thermistor. Its integrated design simplifies thermal management, and it offers protection functions including cross-conduction protection, external shutdown, and under-voltage lockout. The IGBTs are configured in a 3-phase bridge with separate emitter connections for lower legs, providing flexibility in control algorithm selection. An internal comparator and reference circuit allows for setting individual over-current protection levels for the PFC and inverter stages.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: UL1557 Certification (File Number: E339285)
Technical Specifications
| Rating | Symbol | Conditions | Value | Unit |
|---|---|---|---|---|
| PFC Section | ||||
| PFC MOSFET DrainSource Voltage | VDSS | X NX | 600 | V |
| PFC Diode Repetitive Reverse Voltage | VRRM | P X | 600 | V |
| Maximum AC Input Voltage | VAC | SinglePhase FullRectified | 277 | Vrms |
| Maximum Output Voltage | Vo | In the Application Circuit (VAC = 200 V) | 450 | V |
| Input AC Current (steady state) | Iin | 10 | Arms | |
| Inverter Section | ||||
| Supply Voltage | VPN | P NU, NV, NW surge < 500 V (Note 2) | 450 | V |
| CollectorEmitter Voltage | VCES | P U, V, W or U NU, V NV, W NW | 600 | V |
| Each IGBT Collector Current | IC | P, U, V, W, NU, NV, NW Terminal Current | 10 | A |
| Each IGBT Collector Current | IC | P, U, V, W, NU, NV, NW Terminal Current at Tc = 100 C | 5 | A |
| Each IGBT Collector Current (peak) | ICP | P, U, V, W, NU, NV, NW Terminal Current, Pulse Width 1 ms | 20 | A |
| Driver Section | ||||
| HighSide Control Bias Voltage | VBS | VB(U) U, VB(V) V, VB(W) W, 0.3 to +20.0 V | V | |
| Control Supply Voltage | VDD | VDD VSS 0.3 to +20.0 V | V | |
| Input Signal Voltage | VIN | HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W), IN(X) 0.3 to VDD | V | |
| Fault Output Supply Voltage and Enable Input | VFLTEN | FLTEN Terminal 0.3 to VDD | V | |
| ITRIP(I) Terminal Voltage | VITRIP(I) | ITRIP(I) Terminal 0.3 to +10.0 V | V | |
| ITRIP(P) Terminal Voltage | VITRIP(P) | ITRIP(P) Terminal 1.5 to +2.0 V | V | |
| Module Ratings | ||||
| Total Operating Junction Temperature | Tj | 150 | C | |
| Storage Temperature | Tstg | 40 to +125 | C | |
| Module Case Operation Temperature | Tc | IPM Case Temperature | 40 to +100 | C |
| Isolation Voltage | Viso | 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate (Note 4) | 2000 | Vrms |
| Thermal Characteristics | ||||
| Junction to Case Thermal Resistance | Rth(jc) M | PFC MOSFET | 1.3 - 1.5 | C/W |
| Junction to Case Thermal Resistance | Rth(jc) R | PFC Diode | 3.2 - 3.9 | C/W |
| Junction to Case Thermal Resistance | Rth(jc) Q | Inverter IGBT Part (per 1/6 Module) | 3.5 - 4.2 | C/W |
| Junction to Case Thermal Resistance | Rth(jc) F | Inverter FRD Part (per 1/6 Module) | 6.8 - 8.2 | C/W |
| Recommended Operating Ranges | ||||
| Supply Voltage | VPN | P NX, NU, NV, NW | 0 - 400 | V |
| HighSide Control Bias Voltage | VBS | VB(U) U, VB(V) V, VB(W) W | 13.0 - 17.5 | V |
| Control Supply Voltage | VDD | VDD VSS | 14.0 - 16.5 | V |
| PWM Frequency (PFC) | fPWMp | 1 - 125 | kHz | |
| PWM Frequency (Inverter) | fPWMi | 1 - 20 | kHz | |
| Electrical Characteristics (TC = 25 C, VBIAS (VBS, VDD) = 15 V unless otherwise noted) | ||||
| DrainSource Leakage Current | IDSS | VDSS = 600 V | - - 100 | A |
| Reverse Leakage Current (PFC Diode) | IR | VRRM = 600 V | - - 500 | A |
| DrainSource On Resistance | RDS(on) | ID = 20 A, Tj = 25 C | - 0.125 0.18 | |
| Diode Forward Voltage (PFC Diode) | VF | IF = 20 A, Tj = 25 C | - 1.85 2.6 | V |
| CollectorEmitter Saturation Voltage | VCE(sat) | IC = 10 A, Tj = 25 C | - 2.0 2.65 | V |
| Diode Forward Voltage (Inverter FRD) | VF | IF = 10 A, Tj = 25 C | - 1.8 2.4 | V |
2410010231_onsemi-NFCS1060L3TT_C897540.pdf
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