Motion SPM 2 Module onsemi FNA25012A 1200 V 50 A with Integrated Gate Drive and Protection Features
Key Attributes
Model Number:
FNA25012A
Product Custom Attributes
Mfr. Part #:
FNA25012A
Package:
SPM-CB-A34
Product Description
Product Overview
The FNA25012A is a 1200 V, 50 A Motion SPM 2 module designed for high-performance inverter output stages in AC induction, BLDC, and PMSM motor control applications. It integrates optimized gate drive for built-in IGBTs to reduce EMI and losses, along with comprehensive protection features including under-voltage lockouts, over-current shutdown, temperature sensing, and fault reporting. The module utilizes a single supply voltage for its high-speed HVIC and translates logic-level gate inputs to high-voltage drive signals. Separate negative IGBT terminals facilitate diverse control algorithms. Key advantages include low-loss, short-circuit-rated IGBTs, a very low thermal resistance using an AIN DBC substrate, simplified PCB layout with built-in bootstrap diodes, and separate open-emitter pins for three-phase current sensing.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Product Series: Motion SPM 2 Series
- Package Type: MODFQ, SPMCBA34
Technical Specifications
| Parameter | Conditions | Rating | Unit |
| INVERTER PART | |||
| Supply Voltage | Applied between PNU, NV, NW | 900 | V |
| Supply Voltage (Surge) | Applied between PNU, NV, NW | 1000 | V |
| CollectorEmitter Voltage | 1200 | V | |
| Each IGBT Collector Current | TC = 25C, TJ =150C | 50 | A |
| Each IGBT Collector Current (Peak) | TC = 25C, TJ =150C, Under 1 ms Pulse Width | 75 | A |
| Collector Dissipation | TC=25C per One Chip | 347 | W |
| Operating Junction Temperature | 40150 | C | |
| CONTROL PART | |||
| Control Supply Voltage | Applied between VCC(H), VCC(L)COM | 20 | V |
| HighSide Control Bias Voltage | Applied between VB(U)VS(U), VB(V)VS(V), VB(W)VS(W) | 20 | V |
| Input Signal Voltage | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)COM | 0.3VCC+0.3 | V |
| Fault Output Supply Voltage | Applied between VFOCOM | 0.3VCC+0.3 | V |
| Fault Output Current Sink Current | at VFO pin | 2 | mA |
| Current Sensing Input Voltage | Applied between CSCCOM | 0.3VCC+0.3 | V |
| BOOTSTRAP DIODE PART | |||
| Maximum Repetitive Reverse Voltage | 1200 | V | |
| Forward Current | TC = 25C, TJ 150C | 1.0 | A |
| Forward Current (Peak) | TC = 25C, TJ =150C, Under 1 ms Pulse Width | 2.0 | A |
| Operating Junction Temperature | 40150 | C | |
| TOTAL SYSTEM | |||
| Self Protection Supply Voltage Limit (Short Circuit Protection Capability) | VCC = VBS = 13.516.5 V, TJ = 150C, VCES = < 1200 V, Nonrepetitive, < 2 s | 800 | V |
| Module Case Operation Temperature | See Figure 2 | 40125 | C |
| Storage Temperature | 40125 | C | |
| Isolation Voltage | 60 Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat Sink Plate | 2500 | Vrms |
| THERMAL RESISTANCE | |||
| Junction to Case Thermal Resistance | Inverter IGBT part (per 1/6 module) | 0.36 | C/W |
| Junction to Case Thermal Resistance | Inverter FWD part (per 1/6 module) | 0.66 | C/W |
| ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) | |||
| INVERTER PART | |||
| Collector Emitter Saturation Voltage | VDD = VBS = 15 V, VIN = 5 V, IC = 50 A, TJ = 25C | 2.20 2.80 | V |
| FWDi Forward Voltage | VIN = 0 V, IF = 50 A, TJ = 25C | 2.40 3.00 | V |
| HS tON | VPN = 600 V, VCC = 15 V, IC = 50 A, TJ = 25C, VIN = 0 V 5 V, Inductive Load | 0.90 1.40 2.00 | s |
| HS tC(ON) | 0.50 0.95 | s | |
| HS tOFF | 1.10 1.70 | s | |
| HS tC(OFF) | 0.15 0.55 | s | |
| HS trr | 0.20 | s | |
| LS tON | VPN = 600 V, VCC = 15 V, IC = 50 A, TJ = 25C, VIN = 0 V 5 V, Inductive Load | 0.50 1.00 1.60 | s |
| LS tC(ON) | 0.50 0.95 | s | |
| LS tOFF | 1.10 1.70 | s | |
| LS tC(OFF) | 0.15 0.55 | s | |
| LS trr | 0.25 | s | |
| CollectorEmitter Leakage Current | VCE = VCES | 5 | mA |
2411261406_onsemi-FNA25012A_C605153.pdf
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