Power MOSFET N Channel Enhancement Mode ORIENTAL SEMI SFS06R02GF designed for synchronous rectification power systems
Key Attributes
Model Number:
SFS06R02GF
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5mΩ@4.5V,30A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59.6pF
Input Capacitance(Ciss):
6.649nF
Output Capacitance(Coss):
1.281nF
Pd - Power Dissipation:
132W
Gate Charge(Qg):
103.5nC@10V
Mfr. Part #:
SFS06R02GF
Package:
PDFN(5x6)
Product Description
Product Overview
The SFS06R02GF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique device design to deliver low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. It is well-suited for applications such as PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- RoHS Compliant: Yes
- Pb Free: Yes
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Key Performance Parameters | ||||
| Drain-Source Voltage (min @ Tj(max)) | VDS | 60 | V | |
| Pulsed Drain Current | ID, pulse | 600 | A | |
| Drain-Source On-State Resistance (max @ VGS=10V) | RDS(ON) | 2.3 | m | VGS=10V |
| Total Gate Charge | Qg | 103.5 | nC | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 60 | V | Tj=25C unless otherwise noted |
| Gate-Source Voltage | VGS | 20 | V | Tj=25C unless otherwise noted |
| Continuous Drain Current (TC=25 C) | ID | 200 | A | Note 1 |
| Pulsed Drain Current (TC=25 C) | ID, pulse | 600 | A | Note 2 |
| Continuous Diode Forward Current (TC=25 C) | IS | 200 | A | Note 1 |
| Diode Pulsed Current (TC=25 C) | IS, Pulse | 600 | A | Note 2 |
| Power Dissipation (TC=25 C) | PD | 132 | W | Note 3 |
| Single Pulsed Avalanche Energy | EAS | 240 | mJ | Note 5 |
| Operation and Storage Temperature | TstgTj | -55 to 150 | C | |
| Thermal Characteristics | ||||
| Thermal Resistance, Junction-Case | RJC | 0.95 | C/W | |
| Thermal Resistance, Junction-Ambient | RJA | 62 | C/W | Note 4 |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0 V, ID=250 A |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | V | VDS=VGS, ID=250 A |
| Drain-Source On-State Resistance | RDS(ON) | 2.0 - 2.3 | m | VGS=10 V, ID=30 A |
| Drain-Source On-State Resistance | RDS(ON) | 2.8 - 3.5 | m | VGS=4.5 V, ID=30 A |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20 V |
| Gate-Source Leakage Current | IGSS | -100 | nA | VGS=-20 V |
| Drain-Source Leakage Current | IDSS | 1 | A | VDS=60 V, VGS=0 V |
| Gate Resistance | RG | 1.8 | =1 MHz, Open drain | |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 6649 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Output Capacitance | Coss | 1281 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Reverse Transfer Capacitance | Crss | 59.6 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Turn-on Delay Time | td(on) | 32.2 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=50 A |
| Rise Time | tr | 53.3 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=50 A |
| Turn-off Delay Time | td(off) | 93.2 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=50 A |
| Fall Time | tf | 25.3 | ns | VGS=10 V, VDS=50 V, RG=2 , ID=50 A |
| Gate Charge Characteristics | ||||
| Total Gate Charge | Qg | 103.5 | nC | VGS=10 V, VDS=50 V, ID=50 A |
| Gate-Source Charge | Qgs | 18 | nC | VGS=10 V, VDS=50 V, ID=50 A |
| Gate-Drain Charge | Qgd | 17.2 | nC | VGS=10 V, VDS=50 V, ID=50 A |
| Gate Plateau Voltage | Vplateau | 3.4 | V | VGS=10 V, VDS=50 V, ID=50 A |
| Body Diode Characteristics | ||||
| Diode Forward Voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V |
| Reverse Recovery Time | trr | 86.8 | ns | VR=50 V, IS=50 A, di/dt=100 A/s |
| Reverse Recovery Charge | Qrr | 130 | nC | VR=50 V, IS=50 A, di/dt=100 A/s |
| Peak Reverse Recovery Current | Irrm | 2.5 | A | VR=50 V, IS=50 A, di/dt=100 A/s |
| Package & Pin Information | ||||
| Product Name | SFS06R02GF | |||
| Package Marking | SFS06R02G | |||
| Package Type | PDFN5*6 | |||
| Package Outline Dimensions (PDFN5*6-P) | ||||
| Dimension | Symbol | Min | Nom | Max |
| A | 1.00 | 1.10 | 1.20 | |
| b | 0.30 | 0.40 | 0.50 | |
| c | 0.154 | 0.254 | 0.354 | |
| D1 | 5.00 | 5.20 | 5.40 | |
| D2 | 3.80 | 4.10 | 4.25 | |
| e | 1.17 | 1.27 | 1.37 | |
| E1 | 5.95 | 6.15 | 6.35 | |
| E2 | 5.66 | 5.86 | 6.06 | |
| E4 | 3.52 | 3.72 | 3.92 | |
| H | 0.40 | 0.50 | 0.60 | |
| L | 0.30 | 0.60 | 0.70 | |
| L1 | 0.12 | REF | ||
| K | 1.15 | 1.30 | 1.45 | |
| Package Outline Dimensions (PDFN5*6-M) | ||||
| Dimension | Symbol | Min | Nom | Max |
| A | 0.90 | 1.00 | 1.10 | |
| A1 | 0.00 | - | 0.05 | |
| b | 0.33 | 0.41 | 0.51 | |
| C | 0.20 | 0.25 | 0.30 | |
| D1 | 4.80 | 4.90 | 5.00 | |
| D2 | 3.61 | 3.81 | 3.96 | |
| E | 5.90 | 6.00 | 6.10 | |
| E1 | 5.70 | 5.75 | 5.80 | |
| E2 | 3.38 | 3.58 | 3.78 | |
| e | 1.27 | BSC | ||
| H | 0.41 | 0.51 | 0.61 | |
| K | 1.10 | - | - | |
| L | 0.51 | 0.61 | 0.71 | |
| L1 | 0.06 | 0.13 | 0.20 | |
| 0 | - | 12 | ||
| Ordering Information | ||||
| Package Type | Units/Reel | Reels/Inner Box | Units/Inner Box | Inner Box/Carton Box |
| PDFN5*6-P | 5000 | 2 | 10000 | 5 |
| PDFN5*6-M | 5000 | 2 | 10000 | 5 |
Notes:
- 1) Calculated continuous current based on maximum allowable junction temperature.
- 2) Repetitive rating; pulse width limited by max. junction temperature.
- 3) Pd is based on max. junction temperature, using junction-case thermal resistance.
- 4) The value of RJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 C.
- 5) VDD=50 V, VGS=10 V, L=0.3 mH, starting Tj=25 C.
2411220405_ORIENTAL-SEMI-SFS06R02GF_C18213535.pdf
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