PNP epitaxial silicon transistor PANJIT MMBT2907A general purpose switching device 60 volt breakdown voltage
Key Attributes
Model Number:
MMBT2907A
Product Custom Attributes
Current - Collector Cutoff:
10nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Mfr. Part #:
MMBT2907A
Package:
SOT-23
Product Description
MMBT2907A VOLTAGE POWER PNP GENERAL PURPOSE SWITCHING TRANSISTOR
The MMBT2907A is a PNP epitaxial silicon, planar design general purpose switching transistor. It is designed for applications requiring a 60 Volt breakdown voltage and 600mA collector current. This transistor is lead-free in compliance with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 standard.
Product Attributes
- Case: SOT-23
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 0.0084 grams
- Material: PNP epitaxial silicon, planar design
- Certifications: EU RoHS 2.0, IEC 61249 standard
Technical Specifications
| Parameter | Symbol | Rating | Unit | Note |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Collector-Emitter Voltage | VCEO | -60 | V | |
| Collector-Base Voltage | VCBO | -60 | V | |
| Emitter-Base Voltage | VEBO | -5.0 | V | |
| Continuous Collector Current | IC | -600 | mA | |
| THERMAL CHARACTERISTICS | ||||
| Maximum Power Dissipation | PO T T | 225 | mW | (Note 1) |
| Storage Temperature | TSTG | -55 to +150 | °C | |
| Junction Temperature | TJ | -55 to +150 | °C | |
| Thermal Resistance, Junction to Ambient | RΘJA | 565 | °C/W | (Note 1) |
| ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | V | IC = -10 mA, IB = 0 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IC = -10 μA, IE = 0 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | V | IE = -10 μA, IC = 0 |
| Base Cutoff Current | IL(B) | -50 | nA | VCE = -30 V, VBE = -5.0 V |
| Collector Cutoff Current | IX(C) | -50 | nA | VCE = -30 V, VBE = -5.0 V |
| Collector Cutoff Current | IO(BC) | -10 | nA | VCB = -50 V, IE = 0 |
| Collector Cutoff Current | IO(EC) | -10 | μA | VCE = -50 V, IE = 0, TJ = 125 °C |
| Current Gain | hFE | See Fig. 1 | VCE = -10 V | |
| Current Gain | hFE | See Fig. 1 | VCE = -10 V | |
| Current Gain | hFE | See Fig. 1 | VCE = -10 V | |
| Current Gain | hFE | See Fig. 1 | VCE = -10 V | |
| Current Gain | hFE | See Fig. 1 | VCE = -10 V | |
| Collector Saturation Voltage | VCE(sat) | See Fig. 2 | V | IC = -500 mA, IB = -50 mA |
| Collector Saturation Voltage | VCE(sat) | See Fig. 2 | V | IC = -100 mA, IB = -10 mA |
| Collector Saturation Voltage | VCE(sat) | See Fig. 2 | V | IC = -10 mA, IB = -1 mA |
| Base Emitter Saturation Voltage | VBE(sat) | See Fig. 2 | V | IC = -500 mA, IB = -50 mA |
| Base Emitter Saturation Voltage | VBE(sat) | See Fig. 2 | V | IC = -100 mA, IB = -10 mA |
| Base Emitter Saturation Voltage | VBE(sat) | See Fig. 2 | V | IC = -10 mA, IB = -1 mA |
| Turn-On Time | ton | See Fig. 3 | ns | VCC = -30 V, IB1 = -10 mA, IB2 = 1 mA |
| Turn-Off Time | toff | See Fig. 4 | ns | VCC = -30 V, IB1 = -10 mA, IB2 = 1 mA |
| Capacitance, Collector-Base | COBC | See Fig. 7 | pF | VCB = -10 V, f = 1.0 MHz |
| Capacitance, Collector-Emitter | COEB | See Fig. 7 | pF | VEB = -2 V, f = 1.0 MHz |
| Current-Gain-Bandwidth Product | fT | See Fig. 8 | MHz | VCE = -20 V, IC = -50 mA |
| Noise Figure | NF | See Fig. 5 | dB | VCE = -5 V, IC = -0.2 mA, RS = 2.7 kΩ, f = 1.0 kHz |
| Noise Figure | NF | See Fig. 5 | dB | VCE = -5 V, IC = -1.0 mA, RS = 430 Ω, f = 1.0 kHz |
| Noise Figure | NF | See Fig. 5 | dB | VCE = -5 V, IC = -10 mA, RS = 560 Ω, f = 1.0 kHz |
| Noise Figure | NF | See Fig. 5 | dB | VCE = -5 V, IC = -50 mA, RS = 1.6 kΩ, f = 1.0 kHz |
| Collector-Emitter Saturation Voltage | VCE(sat) | See Fig. 9 | V | IC / IB = 10 |
| Base-Emitter On Voltage | VBE(on) | See Fig. 9 | V | VCE = -10 V, IC / IB = 10 |
| Temperature Coefficient | TCOE | See Fig. 10 | mV/°C | |
2412021735_PANJIT-MMBT2907A_C313431.pdf
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