N channel mosfet OSEN IRFP064N designed for electronic lamp ballasts and switch mode power supplies
Key Attributes
Model Number:
IRFP064N
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
110A
RDS(on):
7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
480pF
Output Capacitance(Coss):
1.3nF
Input Capacitance(Ciss):
4nF
Pd - Power Dissipation:
200W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
IRFP064N
Package:
TO-247S
Product Description
Product Overview
The IRFP064N is a 55V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, tested avalanche energy, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Model Number: IRFP064N
- Publication Order Number: IRFP064N
- Revision: 22.2.10
- Package Type: TO-247S
Technical Specifications
| Parameters | Unit | Ratings | Conditions |
| Drain-Source Voltage (VDSS) | V | 55 | |
| Gate-Source Voltage-Continuous (VGS) | V | ±20 | |
| Drain Current-Continuous (ID) (Note 2) | A | 110 | |
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 400 | |
| Power Dissipation (PD) (Note 2) | W | 200 | |
| Max.Operating junction temperature (Tj) | 150 | ||
| Drain-Source Breakdown Voltage Current (BVDSS) (Note 1) | V | 55 | ID=250µAVGS=0VTJ=25°C |
| Gate Threshold Voltage (VGS(th)) | V | 2.0 - 4.0 | VDS=VGSID=250µA |
| Drain-Source On-Resistance (RDS(on)) | mΩ | 7 (Typ) | VGS=10VID=55A |
| Gate-Body Leakage Current (IGSS) | nA | ±100 (Max) | VGS=±20VVDS=0 |
| Zero Gate Voltage Drain Current (IDSS) | µA | 1 (Max) | VDS=55VVGS=0 |
| Forward Transconductance (gfs) | S | 13.5 (Typ) | VDS=20VID=10A |
| Turn-On Delay Time (Td(on)) | ns | 19 (Typ) | VDS=55VID=110ARG=4.7Ω (Note 2) |
| Rise Time (Tr) | ns | 26 (Typ) | |
| Turn-Off Delay Time (Td(off)) | ns | 65 (Typ) | |
| Fall Time (Tf) | ns | 30 (Typ) | |
| Total Gate Charge (Qg) | nC | 77 (Typ) | VDS=55V VGS=10VID=110A (Note 2) |
| Gate-Source Charge (Qgs) | nC | 13 (Typ) | |
| Gate-Drain Charge (Qgd) | nC | 38 (Typ) | |
| Input Capacitance (Ciss) | pF | 4000 (Typ) | VDS=25VVGS=0f=1MHz |
| Output Capacitance (Coss) | pF | 1300 (Typ) | |
| Reverse Transfer Capacitance (Crss) | pF | 480 (Typ) | |
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | 110 | |
| Diode Forward On-Voltage (VSD) | V | 1.5 (Max) | IS=1AVGS=0 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | °C/W | 0.625 (Typ) |
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
2410121731_OSEN-IRFP064N_C20607749.pdf
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