Super Junction Power MOSFET OSEN OSD65R1K0 650V with High Avalanche Capability and Low On Resistance
Key Attributes
Model Number:
OSD65R1K0
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
1Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1pF
Input Capacitance(Ciss):
210pF
Output Capacitance(Coss):
10pF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
OSD65R1K0
Package:
TO-252
Product Description
OSD65R1K0 650V Super-junction Power MOSFET
The OSD65R1K0 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, RoHS compliance, and improved dv/dt capability for high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSD65R1K0
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | |||
| Gate-Source Voltage-Continuous | VGS | 30 | V | |||
| Drain Current-Continuous (Note 2) | ID | 4 | A | |||
| Drain Current-Single Pulsed (Note 1) | IDM | 12 | A | |||
| Power Dissipation (Note 2) | PD | 20 | W | |||
| Max.Operating junction temperature | Tj | 150 | ||||
| Drain-Source Breakdown Voltage Current (Note 1) | BVDSS | ID=250A VGS=0VTJ=25C | 650 | -- | -- | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 2.0 | -- | 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10VID=2A | -- | -- | 1000 | m |
| Gate-Body Leakage Current | IGSS | VGS=30VVDS=0 | -- | -- | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS=650VVGS=0 | -- | -- | 1 | A |
| Turn-On Delay Time | Td(on) | VDS=400V,ID=4A RG=25 | -- | 30 | -- | ns |
| Rise Time | Tr | VDS=400V,ID=4A RG=25 | -- | 28 | -- | ns |
| Turn-Off Delay Time | Td(off) | VDS=400V,ID=4A RG=25 | -- | 65 | -- | ns |
| Fall Time | Tf | VDS=400V,ID=4A RG=25 | -- | 30 | -- | ns |
| Total Gate Charge | Qg | VDS=500V,VGS=10V ID=4A | -- | 10 | -- | nC |
| Gate-Source Charge | Qgs | VDS=500V,VGS=10V ID=4A | -- | 1.5 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=500V,VGS=10V ID=4A | -- | 4.0 | -- | nC |
| Input Capacitance | Ciss | VDS=50VVGS=0 f=1MHz | -- | 210 | -- | pF |
| Output Capacitance | Coss | VDS=50VVGS=0 f=1MHz | -- | 10 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=50VVGS=0 f=1MHz | -- | 1.0 | -- | pF |
| Continuous Drain-Source Diode Forward Current | IS | -- | -- | 4 | A | |
| Diode Forward On-Voltage | VSD | IS=2AVGS=0 | -- | -- | 1.2 | V |
| Thermal Resistance, Junction to Case | Rth(j-c) | -- | -- | 6.25 | /W |
2410121732_OSEN-OSD65R1K0_C20607774.pdf
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