Low Forward Voltage Silicon Diode PANASONIC 1SS350-TB-E Ideal for UHF Mixer and Detector Applications
Key Attributes
Model Number:
1SS350-TB-E
Product Custom Attributes
Mfr. Part #:
1SS350-TB-E
Product Description
Product Overview
The 1SS350 is a Silicon Epitaxial Schottky Barrier Diode designed for UHF detector and mixer applications. It features small interterminal capacitance (0.69pF typ), low forward voltage (0.23V max), and a very small-sized package, enabling the development of compact and slim applied sets.
Product Attributes
- Brand: SANYO
- Origin: JAPAN
- Material: Silicon Epitaxial
- Model Numbers: 33098HA (KT)/52595GI (KOTO)/D149MO, TS 8-6183 No.3156-1/2, 1SS350
- Ordering Number: EN3156A
- Manufacturer: SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
Technical Specifications
| Symbol | Condition | Unit | Min | Typ | Max | Description |
| VF | IF = 30mA | V | 0.23 | 0.32 | Forward Voltage | |
| IR | VR = 5V | A | 5e-08 | Reverse Current | ||
| C | VR = 2V, f = 1MHz | pF | 0.9 | 0.69 | Interterminal Capacitance |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Peak Reverse Voltage | VRM | 5 | V |
| Forward Current | IF | 30 | mA |
| Junction Temperature | Tj | 125 | C |
| Storage Temperature | Tstg | -55 to +125 | C |
2411071449_PANASONIC-1SS350-TB-E_C17631779.pdf
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