N channel MOSFET PIELENST AO3401-L optimized for switching in handheld and battery powered devices
Key Attributes
Model Number:
AO3401-L
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
1 P-Channel
Output Capacitance(Coss):
85pF
Pd - Power Dissipation:
1.56W
Input Capacitance(Ciss):
810pF
Gate Charge(Qg):
8nC@10V
Mfr. Part #:
AO3401-L
Package:
SOT-23
Product Description
Product Overview
The AO3401-L is a high-performance N-channel enhancement mode MOSFET designed for efficient switching applications. It features fast switching speeds, low on-resistance, and suitability for low gate drive voltages, making it ideal for notebook power management, battery protection, and handheld instruments.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±12 | V | |||
| ID | Drain Current – Continuous (TA=25) | -4.0 | A | |||
| ID | Drain Current – Continuous (TA=70) | -3.0 | A | |||
| IDM | Drain Current – Pulsed1 | -15.4 | A | |||
| PD | Power Dissipation (TA=25) | 1.56 | W | |||
| Power Dissipation – Derate above 25 | 0.012 | W/ | ||||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA | -30 | V | ||
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25, ID=-1mA | -0.03 | V/ | ||
| IDSS | Drain-Source Leakage Current | VDS=-30V , VGS=0V , TJ=25 | -1 | uA | ||
| IDSS | Drain-Source Leakage Current | VDS=-24V , VGS=0V , TJ=125 | -10 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS= ±12V , VDS=0V | ±100 | nA | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | -4.0 | A | ||
| ISM | Pulsed Source Current | -8.0 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=-1A , TJ=25 | -1.5 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-10V , ID=-4A | 51 | 65 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-4.5V , ID=-3A | 65 | 80 | mΩ | |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=-2.5V , ID=-2A | 85 | 100 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =-250uA | -0.4 | -0.9 | -1.3 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | 3 | mV/ | |||
| gfs | Forward Transconductance | VDS=-10V , ID=-3A | 5.4 | S | ||
| Qg | Total Gate Charge2,3 | VDS=-15V , VGS=-4.5V , ID=-4A | 8 | nC | ||
| Qgs | Gate-Source Charge2,3 | 1.9 | nC | |||
| Qgd | Gate-Drain Charge2,3 | 1.4 | nC | |||
| Td(on) | Turn-On Delay Time2,3 | VDD=-15V , VGS=-10V , RG=6 ID=-1A | 5.4 | ns | ||
| Tr | Rise Time2,3 | 19.4 | ns | |||
| Td(off) | Turn-Off Delay Time2,3 | 45.9 | ns | |||
| Tf | Fall Time2,3 | 12.4 | ns | |||
| Ciss | Input Capacitance | VDS=-15V , VGS=0V , F=1MHz | 810 | pF | ||
| Coss | Output Capacitance | 85 | pF | |||
| Crss | Reverse Transfer Capacitance | 50 | pF | |||
2411011350_PIELENST-AO3401-L_C41376482.pdf
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