High voltage transistor with SOT23 package PANJIT MMBT5401 R1 00001 PNP silicon transistor lead free
Key Attributes
Model Number:
MMBT5401_R1_00001
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
225mW
Transition Frequency(fT):
300MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5401_R1_00001
Package:
SOT-23
Product Description
MMBT5401 High Voltage Transistor PNP Silicon
The MMBT5401 is a high voltage PNP silicon transistor designed for general-purpose applications. It features a SOT-23 plastic package and is lead-free in compliance with EU RoHS 2.0, utilizing a green molding compound as per IEC 61249 standard.
Product Attributes
- Case: SOT-23 plastic
- Terminals: Solderable per MIL-STD-750, Method 2026
- Standard packaging: 8mm tape
- Approx. Weight: 0.0003 ounces, 0.008 grams
- Marking: M5A
- Lead free: In compliance with EU RoHS 2.0
- Green molding compound: As per IEC 61249 standard
Technical Specifications
| Symbol | Unit | Description | Min | Max |
| VCEO | V | Collector-Emitter Voltage | -150 | |
| VCBO | V | Collector-Base Voltage | -160 | |
| VEBO | V | Emitter-Base Voltage | -5.0 | |
| IC | A | Continuous Collector Current | -0.6 | |
| PD | W | Total Power Dissipation (TA=25C) | 1.28 | |
| RJA | C/W | Thermal Resistance Junction to Ambient | 65 | |
| PD | W | Total Power Dissipation (TA=25C, Alumina substrate) | 2.34 | |
| RJA | C/W | Thermal Resistance Junction to Ambient (Alumina substrate) | 71 | |
| TJ, TSTG | C | Operating Junction and Storage Temperature | -55 | +150 |
| V(BR)CEO | V | Collector-Emitter Breakdown Voltage (IC = -0.1 mA) | -150 | |
| V(BR)CBO | V | Collector-Base Breakdown Voltage (IE = -0.1 mA) | -160 | |
| V(BR)EBO | V | Emitter-Base Breakdown Voltage (IE = -0.1 mA) | -5.0 | |
| ICBO | A | Collector Cut-off Current (VCE = -120 V) | -50 | |
| hFE | DC Current Gain (IC = -10 mA, VCE = -0.5 V) | 40 | ||
| hFE | DC Current Gain (IC = -100 mA, VCE = -0.5 V) | 20 | ||
| VCE(SAT) | V | Collector-Emitter Saturation Voltage (IC = -10 mA, IB = -0.1 mA) | -0.20 | |
| VCE(SAT) | V | Collector-Emitter Saturation Voltage (IC = -100 mA, IB = -0.5 mA) | -0.50 | |
| VBE(SAT) | V | Base-Emitter Saturation Voltage (IC = -10 mA, IB = -0.1 mA) | -0.15 | |
| VBE(SAT) | V | Base-Emitter Saturation Voltage (IC = -100 mA, IB = -0.5 mA) | -0.25 | |
| fT | MHz | Transition Frequency (IC = -10 mA, VCE = -10 V) | 100 | |
| Cob | pF | Output Capacitance (VCE = -10 V, IE = 0, f = 1 MHz) | 6.0 | |
| hFE | Small Signal Current Gain (IC = -10 mA, VCE = -10 V, f = 100 MHz) | 4 | ||
| FN | Noise Figure (IC = -0.1 mA, VCE = -5 V, RS = 0.1 k, f = 1 kHz) | 0.8 |
2410122016_PANJIT-MMBT5401-R1-00001_C360746.pdf
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