Lead free silicon diode PJSEMI BAV21WS with fast reverse recovery and low profile surface mount package
Key Attributes
Model Number:
BAV21WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
9A
Reverse Leakage Current (Ir):
100nA
Reverse Recovery Time (trr):
50ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
500mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
250mA
Mfr. Part #:
BAV21WS
Package:
SOD-323
Product Description
Product Overview
The BAV19WS~BAV21WS is a series of silicon epitaxial planar switching diodes designed for surface mount applications. These diodes feature a glass passivated chip junction, a low profile package, and fast reverse recovery time. They are lead-free and comply with the EU RoHS 2011/65/EU directive, making them suitable for environmentally conscious designs.
Product Attributes
- Brand: Pingjingsemi
- Material: Silicon Epitaxial Planar
- Certifications: EU RoHS 2011/65/EU compliant
Technical Specifications
| Parameter | Symbol | BAV19WS | BAV20WS | BAV21WS | Unit |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 120 | 200 | 250 | V |
| Maximum RMS Voltage | VRMS | 100 | 150 | 200 | V |
| Continuous Forward Current | IF | 250 | mA | ||
| Repetitive Peak Forward Current | IFRM | 625 | mA | ||
| Non-repetitive Peak Forward Surge Current (t=1s) | IFSM | 1 | A | ||
| Non-repetitive Peak Forward Surge Current (t=1ms) | IFSM | 3 | A | ||
| Non-repetitive Peak Forward Surge Current (t=1s) | IFSM | 9 | A | ||
| Power Dissipation | PD | 500 | mW | ||
| Junction Temperature | TJ | 150 | C | ||
| Storage Temperature Range | TSTG | -55 to +150 | C | ||
| Reverse Breakdown Voltage (IR=100A) | V(BR)R | 120 | 200 | 250 | V |
| Maximum Forward Voltage (IF=100mA) | VF | 1.0 | V | ||
| Maximum Forward Voltage (IF=200mA) | VF | 1.25 | V | ||
| Maximum DC Reverse Current (TA=25C) | IR | 0.1 | A | ||
| Maximum DC Reverse Current (TA=150C) | IR | 100 | A | ||
| Typical Junction Capacitance (VR=4V, f=1MHz) | Cj | 5 | pF | ||
| Maximum Reverse Recovery Time (IF=0.5A, Irr=0.25A, IR=1A) | Trr | 50 | nS | ||
2202211730_PJSEMI-BAV21WS_C2977356.pdf
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