Power MOSFET SOT89 Package Featuring PJSEMI PJM10N60SQ N Channel Enhancement Mode with 60V 10A Rating
Key Attributes
Model Number:
PJM10N60SQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
RDS(on):
30mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF@30V
Number:
1 N-channel
Input Capacitance(Ciss):
973pF@30V
Pd - Power Dissipation:
1.35W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
PJM10N60SQ
Package:
SOT-89
Product Description
Product Overview
The PJM10N60SQ is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell design, offering ultra-low RDS(on) and excellent heat dissipation. It features a fully characterized avalanche voltage and current, making it suitable for power switching applications and Uninterruptible Power Supply (UPS) systems. With a VDS of 60V and ID of 10A, it boasts an RDS(on) of less than 30m at VGS=10V.
Product Attributes
- Brand: Pingjingsemi
- Product Code: PJM10N60SQ
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=8A | -- | 25 | 30 | m |
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=8A | -- | 30 | 40 | m |
| Forward Transconductance | gFS | VDS=5V,ID=10A | 11 | -- | -- | S |
| Input Capacitance | Ciss | VDS=30V,VGS=0V,f=1MHz | -- | 973 | -- | pF |
| Output Capacitance | Coss | VDS=30V,VGS=0V,f=1MHz | -- | 61 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V,f=1MHz | -- | 59 | -- | pF |
| Turn-on Delay Time | td(on) | VDD=30V, RL=3, VGS=10V,RGEN=3 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=30V, RL=3, VGS=10V,RGEN=3 | -- | 20 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=30V, RL=3, VGS=10V,RGEN=3 | -- | 16 | -- | nS |
| Turn-off Fall Time | tf | VDD=30V, RL=3, VGS=10V,RGEN=3 | -- | 23 | -- | nS |
| Total Gate Charge | Qg | VDS=30V,ID=10A, VGS=10V | -- | 25 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=10A, VGS=10V | -- | 4.5 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=30V,ID=10A, VGS=10V | -- | 6.5 | -- | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=10A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | VGS=0V,IS=10A | -- | -- | 10 | A |
| Drain-Source Voltage | VDS | -- | -- | -- | 60 | V |
| Gate-Source Voltage | VGS | -- | -- | 20 | -- | V |
| Drain Current-Continuous | ID | -- | -- | -- | 10 | A |
| Drain Current-Pulsed | IDM | Note1 | -- | -- | 25 | A |
| Maximum Power Dissipation | PD | -- | -- | -- | 1.35 | W |
| Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -55 | -- | +150 | C |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | -- | 93 | -- | C/W |
2411191726_PJSEMI-PJM10N60SQ_C42388535.pdf
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