N Channel MOSFET PJSEMI PJM3422NSC for Power Management Featuring Low RDS on and 55V Maximum Voltage
Key Attributes
Model Number:
PJM3422NSC
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
2.1A
Operating Temperature -:
-
RDS(on):
160mΩ@3V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12.6pF
Number:
1 N-channel
Output Capacitance(Coss):
31pF
Input Capacitance(Ciss):
300pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
-
Mfr. Part #:
PJM3422NSC
Package:
SOT-23-3
Product Description
Product Overview
The PJM3422NSC is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology. It is RoHS and Reach compliant, and halogen and antimony free. This MOSFET is designed for load switch and power management applications, offering a VDS of 55V and a continuous ID of 2.1A with low RDS(on) characteristics.
Product Attributes
- Brand: Pingjing Semiconductor
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -- | -- | 55 | V | |
| Gate-Source Voltage | VGS | -- | -- | ±12 | V | |
| Drain Current-Continuous | ID | -- | -- | 2.1 | A | |
| Maximum Power Dissipation | PD | -- | -- | 1.2 | W | |
| Junction Temperature | TJ | -- | -- | 150 | °C | |
| Storage Temperature Range | TSTG | -55 | -- | +150 | °C | |
| Thermal Resistance, Junction-to-Ambient | RθJA | Note1 | -- | 104 | -- | °C/W |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 55 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=44V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note2, VDS=VGS,ID=250μA | 0.6 | 1.5 | 2 | V |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=4.5V,ID=2.1A | -- | 78 | 100 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note2, VGS=3V,ID=2A | -- | 125 | 160 | mΩ |
| Forward Transconductance | gFS | Note2, VDS=5V,ID=2.1A | -- | 4 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 214 | 300 | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 31 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 12.6 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=27.5V, ID=2.1A, VGS=10V,RGEN=3Ω | -- | 2.3 | -- | nS |
| Turn-on Rise Time | tr | VDD=27.5V, ID=2.1A, VGS=10V,RGEN=3Ω | -- | 2.4 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=27.5V, ID=2.1A, VGS=10V,RGEN=3Ω | -- | 16.5 | -- | nS |
| Turn-off Fall Time | tf | VDD=27.5V, ID=2.1A, VGS=10V,RGEN=3Ω | -- | 2 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | -- | 0.78 | 1 | V |
| Diode Forward Current | IS | -- | -- | 1 | A | |
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
2410221617_PJSEMI-PJM3422NSC_C41784036.pdf
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