N Channel Enhancement Mode MOSFET PJSEMI PJM20H05NTE featuring fast switching and low gate charge
Key Attributes
Model Number:
PJM20H05NTE
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
6pF
Input Capacitance(Ciss):
80pF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
2nC
Mfr. Part #:
PJM20H05NTE
Package:
TO-252
Product Description
Product Overview
The PJM20H05NTE is an N-Channel Enhancement Mode Power MOSFET designed for efficient power switching. It features fast switching speeds, low gate charge, and low reverse transfer capacitances, making it suitable for applications requiring high performance and reliability. Key specifications include a VDS of 200V and an ID of 5A, with an RDS(on) of less than 3 at VGS=4.5V. This MOSFET is ideal for use in LED lighting, chargers, and standby power supplies.
Product Attributes
- Brand: Pingjingsemi
- Model: PJM20H05NTE
- Revision: 1.0
- Date: Sep-2022
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | ±30 | V | |||
| Drain Current-Continuous | ID | 5 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 20 | A | ||
| Single pulse avalanche energy | EAS | Note4 | 30 | mJ | ||
| Maximum Power Dissipation | PD | 40 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RΜJA | Note2 | 62.5 | °C/W | ||
| Maximum Junction-to-Case | RΜJC | Note2 | 3.13 | °C/W | ||
| Electrical Characteristics (TC=25℃ unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250µA | 200 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V,VGS=0V | -- | -- | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±30V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250µA | 0.4 | 0.7 | 1.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=0.5A | -- | 2.5 | 3.0 | Ω |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=2.5V,ID=0.5A | -- | 2.8 | 4.0 | Ω |
| Forward Transconductance | gFS | Note3, VDS=25V,ID=2.5A | -- | 1 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 80 | -- | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | -- | 6 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | -- | 2 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=100V, ID=5A, RG=10Ω | -- | 2 | -- | nS |
| Turn-on Rise Time | tr | VDD=100V, ID=5A, RG=10Ω | -- | 4 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=100V, ID=5A, RG=10Ω | -- | 6 | -- | nS |
| Turn-off Fall Time | tf | VDD=100V, ID=5A, RG=10Ω | -- | 3 | -- | nS |
| Total Gate Charge | Qg | VDD=100V,ID=5A, VGS=10V | -- | 2 | -- | nC |
| Gate-Source Charge | Qgs | VDD=100V,ID=5A, VGS=10V | -- | 1 | -- | nC |
| Gate-Drain Charge | Qg d | VDD=100V,ID=5A, VGS=10V | -- | 1.2 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=5A | -- | -- | 1.5 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 5 | A |
2407301136_PJSEMI-PJM20H05NTE_C36493743.pdf
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