power management solution featuring PJSEMI PJM07P30SC P Channel Enhancement Mode Power MOSFET with low RDS
Key Attributes
Model Number:
PJM07P30SC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
34mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
1 P-Channel
Output Capacitance(Coss):
135pF
Input Capacitance(Ciss):
982pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
10nC
Mfr. Part #:
PJM07P30SC
Package:
SOT-23-3
Product Description
Product Overview
The PJM07P30SC is a P-Channel Enhancement Mode Power MOSFET designed for efficient power management applications. It features a high-density cell design for low RDS(ON), making it suitable for load switching, battery protection, and power management tasks. Available in a compact SOT-23-3 package.
Product Attributes
- Brand: PingJingSemi
- Package: SOT-23-3
- Marking Code: KP
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | -ID | 7 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 50 | A | ||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | C | |
| Thermal Resistance,Junction-to-Ambient | RJA | Note2 | 96 | C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250A | 1.6 | 2.5 | -- | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-10V,ID=-7A | -- | 28 | 34 | m |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-4A | -- | 40 | 54 | m |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-1A | -- | 982 | -- | mS |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | Note2,VDS=-15V, VGS=0V, f=1MHz | -- | 135 | -- | pF |
| Output Capacitance | Coss | Note2,VDS=-15V, VGS=0V, f=1MHz | -- | 109 | -- | pF |
| Reverse Transfer Capacitance | Crss | Note2,VDS=-15V, VGS=0V, f=1MHz | -- | 11 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | Note2,VDD=-15V,VGS=-10V ID=-7A, RGEN=2.5 | -- | 19 | -- | nS |
| Turn-on Rise Time | tr | Note2,VDD=-15V,VGS=-10V ID=-7A, RGEN=2.5 | -- | 45 | -- | nS |
| Turn-off Delay Time | td(off) | Note2,VDD=-15V,VGS=-10V ID=-7A, RGEN=2.5 | -- | 26 | -- | nS |
| Turn-off Fall Time | tf | Note2,VDD=-15V,VGS=-10V ID=-7A, RGEN=2.5 | -- | 10 | -- | nS |
| Total Gate Charge | Qg | Note2,VDS=-15V,VGS=-10V ID=-4A | -- | 2 | -- | nC |
| Gate-Source Charge | Qgs | Note2,VDS=-15V,VGS=-10V ID=-4A | -- | 2.7 | -- | nC |
| Gate-Drain Charge | Qg d | Note2,VDS=-15V,VGS=-10V ID=-4A | -- | 1.0 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-7A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 7 | A |
2410010131_PJSEMI-PJM07P30SC_C41348042.pdf
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