SOT 23 Package 60V P Channel Enhancement Mode MOSFET PANJIT PJA3439 R1 00001 for Electronic Circuits
Key Attributes
Model Number:
PJA3439_R1_00001
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
4Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
1 P-Channel
Pd - Power Dissipation:
500mW
Input Capacitance(Ciss):
51pF@25V
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
PJA3439_R1_00001
Package:
SOT-23
Product Description
Product Overview
The 60V P-Channel Enhancement Mode MOSFET (SOT-23 package) offers advanced trench process technology for efficient relay driver and speed line drive applications. It features low RDS(ON) at various gate-source voltages and drain currents, and is designed with lead-free compliance to EU RoHS 2011/65/EU and a green molding compound per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Package Type: SOT-23
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Marking: A39
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics (TA=25 o C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -60 | - | - | V | |
| Gate-Source Voltage | VGS | - | - | +20 | V | |
| Continuous Drain Current | ID | TA=25oC | - | - | -300 | mA |
| Pulsed Drain Current | IDM | - | - | -1000 | mA | |
| Power Dissipation | PD | TA=25oC | - | - | 500 | mW |
| Derate above 25oC | - | - | 4 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | oC | |
| Typical Thermal resistance - Junction to Ambient (Note 3) | RJA | - | 250 | - | oC/W | |
| Electrical Characteristics (TA=25 o C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=-250uA | -60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | - | -1.0 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V,ID=-500mA | - | 2.4 | 4 | |
| VGS=-4.5V,ID=-200mA | - | 2.65 | 6 | |||
| VGS=-2.5V,ID=-50mA | - | 4.5 | 13 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-48V,VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Total Gate Charge | Qg | VDS=-25V, ID=-100mA, VGS=-4.5V | - | 1.1 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qg | - | 0.2 | - | ||
| Input Capacitance | Ciss | VDS=-25V, VGS=0V, f=1.0MHZ | - | 51 | - | pF |
| Output Capacitance | Coss | - | 15 | - | ||
| Reverse Transfer Capacitance | Crss | - | 2.2 | - | ||
| Turn-On Delay Time | td(on) | VDD=-25V, ID=-100mA, VGS=-10V, RG=6 (Note 1,2) | - | 4.8 | - | ns |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Turn-Off Fall Time | tf | - | 32 | - | ||
| Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | -300 | mA | |
| Diode Forward Voltage | VSD | IS=-500mA, VGS=0V | - | - | -1.3 | V |
2410251205_PANJIT-PJA3439-R1-00001_C7026693.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
