Power MOSFET PJSEMI PJM100N30TE Featuring Advanced Trench Technology and 100 Percent Avalanche Tested
Key Attributes
Model Number:
PJM100N30TE
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
274pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.937nF
Pd - Power Dissipation:
78W
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
PJM100N30TE
Package:
TO-252
Product Description
Product Overview
The PJM100N30TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested, RoHS compliant, and halogen and antimony free. This MOSFET is designed for applications such as load switching, battery protection, and uninterruptible power supplies, offering high performance with low on-resistance.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 100 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 400 | A | ||
| Maximum Power Dissipation | PD | 78 | W | |||
| Single pulse avalanche energy | EAS | Note2 | 64 | mJ | ||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note4, VDS=VGS,ID=250μA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note4, VGS=10V,ID=30A | -- | 2.9 | 3.8 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note4, VGS=4.5V,ID=20A | -- | 4 | 5.2 | mΩ |
| Forward Transconductance | gFS | Note4, VDS=5V,ID=2A | -- | 9.2 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 2937 | -- | pF |
| Output Capacitance | Coss | -- | 346 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 274 | -- | pF | |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 1.7 | -- | Ω |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=15V, ID=30A, VGS=10V | -- | 58 | -- | nC |
| Gate-Source Charge | Qgs | -- | 12 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 13 | -- | nC | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, ID=30A, VGS=10V, RGEN=3Ω | -- | 11 | -- | nS |
| Turn-on Rise Time | tr | -- | 29 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 47 | -- | nS | |
| Turn-off Fall Time | tf | -- | 18 | -- | nS | |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note4, VGS=0V,IS=30A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note3 | -- | -- | 100 | A |
2407301136_PJSEMI-PJM100N30TE_C36493748.pdf
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