PANJIT PJT7828 R1 00001 30V N Channel MOSFET with ESD Protection and Compliance to EU RoHS Directive
Key Attributes
Model Number:
PJT7828_R1_00001
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
1.2Ω@4.5V,300mA
Gate Threshold Voltage (Vgs(th)):
1V
Number:
2 N-Channel
Input Capacitance(Ciss):
45pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
900pC@4.5V
Mfr. Part #:
PJT7828_R1_00001
Package:
SOT-363
Product Description
Product Overview
The PJT7828 is a 30V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and ESD protection. It is specially designed for applications such as relay drivers and speed line drives. This product complies with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Maximum Ratings and Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | - | - | 30 | V | |
| Gate-Source Voltage | VGS | - | - | +10 | V | |
| Continuous Drain Current | ID | - | - | 300 | mA | |
| Pulsed Drain Current | IDM | - | - | 600 | mA | |
| Power Dissipation | PD | TA=25oC | - | - | 350 | mW |
| Derate above 25oC | - | - | 2.8 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | oC | |
| Typical Thermal Resistance - Junction to Ambient (Note 3) | RJA | - | 357 | - | oC/W | |
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 0.4 | 0.75 | 1.0 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V,ID=300mA | - | 0.7 | 1.2 | |
| VGS=2.5V,ID=200mA | - | 0.8 | 1.6 | |||
| VGS=1.8V,ID=100mA | - | 0.9 | 2.0 | |||
| VGS=1.5V,ID=50mA | - | 1.1 | 3.0 | |||
| VGS=1.2V,ID=20mA | - | 1.5 | 4.0 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=24V,VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+8V,VDS=0V | - | - | +10 | uA |
| Dynamic | ||||||
| Total Gate Charge | Qg | VDS=10V, ID=300mA, VGS=4.5V | - | 0.9 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qg d | - | 0.2 | - | ||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1.0MHZ | - | 45 | - | pF |
| Output Capacitance | Coss | - | 14 | - | ||
| Reverse Transfer Capacitance | Crss | - | 0.8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=10V, ID=300mA, VGS=4V, RG=10 (Note 1,2) | - | 8.3 | - | ns |
| Turn-On Rise Time | tr | - | 5.7 | - | ||
| Turn-Off Delay Time | td(off) | - | 35 | - | ||
| Turn-Off Fall Time | tf | - | 12 | - | ||
| Drain-Source Diode | ||||||
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | 300 | mA | |
| Diode Forward Voltage | VSD | IS=300mA, VGS=0V | - | 0.9 | 1.3 | V |
2411221123_PANJIT-PJT7828-R1-00001_C17459138.pdf
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