Dual N Channel Enhancement Mode MOSFET PJSEMI PJM05DN60PA with 5 Amp Drain Current and 60 Volt Voltage Rating
Key Attributes
Model Number:
PJM05DN60PA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
RDS(on):
50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
49.4pF
Number:
2 N-Channel
Output Capacitance(Coss):
58.5pF
Input Capacitance(Ciss):
1.148nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
PJM05DN60PA
Package:
SOP-8
Product Description
Product Overview
The PJM05DN60PA is a Dual N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, featuring an advanced trench technology for ultra-low RDS(on). It is suitable for PWM applications, load switching, and power management systems, offering a VDS of 60V and an ID of 5A with RDS(on) less than 40m at VGS=10V.
Product Attributes
- Brand: PingJingSemi
- Model: PJM05DN60PA
- Package: SOP-8
- Marking Code: 6005
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | VDS | 60 | V | |||
| VGS | 20 | V | ||||
| ID | 5 | A | ||||
| IDM | Note1 | 20 | A | |||
| PD | 2 | W | ||||
| Electrical Characteristics | V(BR)DSS | VGS=0V,ID=250A | 60 | -- | -- | V |
| IDSS | VDS=60V,VGS=0V | -- | -- | 1 | A | |
| IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA | |
| VGS(th) | Note3, VDS=VGS,ID=250A | 1.0 | 1.6 | 2.5 | V | |
| RDS(on) | Note3, VGS=10V,ID=5A | -- | 30 | 40 | m | |
| RDS(on) | Note3, VGS=4.5V,ID=5A | -- | 36 | 50 | m | |
| Dynamic Characteristics | Ciss | VDS=25V,VGS=0V,f=1MHz | -- | 1148 | -- | pF |
| Coss | -- | 58.5 | -- | pF | ||
| Crss | -- | 49.4 | -- | pF | ||
| Switching Characteristics | td(on) | VDD=30V,ID=5A, VGS=10V,RGEN=1.8 | -- | 7.6 | -- | nS |
| tr | -- | 20 | -- | nS | ||
| td(off) | -- | 15 | -- | nS | ||
| tf | -- | 24 | -- | nS | ||
| Total Gate Charge | Qg | VDS=30V VGS=10V,ID=2.5A | -- | 20.3 | -- | nC |
| Qgs | -- | 3.7 | -- | nC | ||
| Qgd | -- | 5.3 | -- | nC | ||
| Source-Drain Diode Characteristics | VSD | Note3, VGS=0V,IS=5A | -- | -- | 1.2 | V |
| IS | Note2 | -- | -- | 5 | A | |
| Thermal Characteristics | RJA | Note2 | 62.5 | C/W |
2405221106_PJSEMI-PJM05DN60PA_C22438599.pdf
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