Integrated resistor digital transistor ROHM DTC114EUAT106 designed for inverter and driver circuits

Key Attributes
Model Number: DTC114EUAT106
Product Custom Attributes
Output Voltage(VO(on)):
300mV@10mA,0.5mA
Input Resistor:
13kΩ
Resistor Ratio:
1
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114EUAT106
Package:
SC-70-3
Product Description

Product Overview

The DTC114EM / DTC114EE / DTC114EUA / DTC114EKA / DTC114ESA are digital transistors featuring built-in bias resistors, enabling the configuration of inverter circuits without external input resistors. This design simplifies device integration, making them suitable for inverter, interface, and driver applications. The integrated thin-film resistors offer complete isolation for negative input biasing and minimize parasitic effects, ensuring efficient operation.

Product Attributes

  • Brand: ROHM
  • Structure: NPN epitaxial planar silicon transistor (Resistor built-in type)

Technical Specifications

Model Abbreviated Symbol ROHM Package EIAJ Package Dimensions (mm) Packaging Type Basic Ordering Unit (pieces)
DTC114EM 24 VMT3 - 1.6 x 1.0 x 0.8 Taping 3000
DTC114EE 24 EMT3 - 1.6 x 1.0 x 0.8 Taping 8000
DTC114EUA 24 SPT SC-72 1.25 x 2.1 x 0.8 Taping 3000
DTC114EKA 24 UMT3 SC-70 1.2 x 0.8 x 0.4 Taping 3000
DTC114ESA 24 SMT3 SC-59 2.9 x 1.9 x 0.95 Taping 5000

Electrical Characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Input voltage VI(off) - - 0.1 V VCC=5V, IO=100A
Input voltage VI(on) 0.3 - - V VO=0.3V, IO=10mA
Output voltage VO(on) - 0.1 0.3 V IO/II=10mA/0.5mA
Input current II - - 1 A VI=5V
Output current IO - - 100 mA VCC=50V, VI=0V
Input resistance R1 7 10 - k R1=R2=10k
DC current gain GI 30 - - - VCE=10V, IE=5mA, f=100MHz
Resistance ratio R2/R1 0.88 1 1.2 - -
Transition frequency fT 250 - - MHz -

Absolute Maximum Ratings (Ta=25C)

Parameter Symbol DTC114EE DTC114EM DTC114EUA DTC114EKA DTC114ESA Unit
Supply voltage VCC 150 200 300 50 50 V
Input voltage VIN -10 to +40 -10 to +40 -10 to +40 -10 to +40 -10 to +40 V
Output current IO 100 100 100 100 100 mA
Power dissipation PD 150 150 150 150 150 mW
Junction temperature Tj -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 C
Storage temperature Tstg -55 to +150 -55 to +150 -55 to +150 -55 to +150 -55 to +150 C

1810171811_ROHM-DTC114EUAT106_C14303.pdf

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