Silicon Carbide Field Effect Transistor Qorvo UJ4SC075006K4S 750V 5.9mW Ultra Low On Resistance Device

UnitedSiC UJ4SC075006K4S: 750V, 5.9mW SiC FET

The UJ4SC075006K4S is a 750V, 5.9mW Silicon Carbide (SiC) Field-Effect Transistor (FET) designed for high-performance power applications. This device utilizes a unique 'cascode' circuit configuration, integrating a normally-on SiC JFET with a low-voltage Si MOSFET to achieve a normally-off SiC FET. Its standard gate-drive characteristics make it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-4L package, the UJ4SC075006K4S offers ultra-low gate charge, exceptional reverse recovery characteristics, and low intrinsic capacitance, leading to reduced conduction and switching losses. It also provides excellent reverse conduction capability, often eliminating the need for an external anti-parallel diode.

Key Features & Benefits:

• Ultra-low on-resistance: 5.9mW (typ)
• High operating temperature: 175C (max)
• Excellent reverse recovery characteristics: Qrr = 440nC (typ)
• Low body diode forward voltage: VFSD = 1.03V (typ)
• Low gate charge: QG = 164nC (typ)
• Threshold voltage VG(th): 4.7V (typ) for 0 to 15V drive
• ESD protected, HBM class 2
• TO-247-4L package for faster switching and clean gate waveforms
• Standard gate-drive characteristics for easy integration
• Low intrinsic capacitance

Typical Applications:

• Power factor correction modules
• Motor drives
• Induction heating
• Switch mode power supplies
• EV charging
• PV inverters

Product Attributes

• Brand: UnitedSiC
• Material: Silicon Carbide (SiC) FET
• Package: TO-247-4L

Technical Specifications