Digital Transistor ROHM DTC114TMT2L Featuring Built in Bias Resistors for Easy Circuit Implementation
Product Overview
The DTC114T series is a family of NPN digital transistors designed for ease of circuit implementation. Featuring built-in bias resistors, these transistors eliminate the need for external input resistors, simplifying inverter circuit configurations. They are ideal for applications requiring straightforward on/off condition settings, such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA114T series.
Product Attributes
- Brand: ROHM
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking | VCEO (V) | IC (mA) | R1 (k) | Power Dissipation (mW) | Collector-emitter saturation voltage VCE(sat) (mV) | DC current gain hFE | Input resistance R1 (k) | Transition frequency fT (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DTC114TM | SOT-723 | 1212 | T2L | 180 | 8 | 8000 | 04 | 50 | 100 | 10 | 150*1 | -300 (IC = 10mA, IB = 1mA) | 100 - 600 (VCE = 5V, IC = 1mA) | 7 - 13 | 250 (VCE = 10V, IE = -5mA, f = 100MHz) |
| DTC114TEB | SOT-416FL | 1616 | TL | 180 | 8 | 3000 | 04 | 50 | 100 | 10 | 150*1 | -300 (IC = 10mA, IB = 1mA) | 100 - 600 (VCE = 5V, IC = 1mA) | 7 - 13 | 250 (VCE = 10V, IE = -5mA, f = 100MHz) |
| DTC114TE | SOT-416 | 1616 | TL | 180 | 8 | 3000 | 04 | 50 | 100 | 10 | 150*1 | -300 (IC = 10mA, IB = 1mA) | 100 - 600 (VCE = 5V, IC = 1mA) | 7 - 13 | 250 (VCE = 10V, IE = -5mA, f = 100MHz) |
| DTC114TUB | SOT-323FL | 2021 | TL | 180 | 8 | 3000 | 04 | 50 | 100 | 10 | 200*1 | -300 (IC = 10mA, IB = 1mA) | 100 - 600 (VCE = 5V, IC = 1mA) | 7 - 13 | 250 (VCE = 10V, IE = -5mA, f = 100MHz) |
| DTC114TUA | SOT-323 | 2021 | T106 | 180 | 8 | 3000 | 04 | 50 | 100 | 10 | 200*1 | -300 (IC = 10mA, IB = 1mA) | 100 - 600 (VCE = 5V, IC = 1mA) | 7 - 13 | 250 (VCE = 10V, IE = -5mA, f = 100MHz) |
| DTC114TKA | SOT-346 | 2928 | T146 | 180 | 8 | 3000 | 04 | 50 | 100 | 10 | 200*1 | -300 (IC = 10mA, IB = 1mA) | 100 - 600 (VCE = 5V, IC = 1mA) | 7 - 13 | 250 (VCE = 10V, IE = -5mA, f = 100MHz) |
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Absolute Maximum Ratings (Ta = 25C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 100 | mA |
| Junction temperature | Tj | 150 | |
| Range of storage temperature | Tstg | -55 to +150 |
Electrical Characteristics (Ta = 25C)
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | IC = 50A | 50 | - | - | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | - | - | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 5 | - | - | V |
| Collector cut-off current | ICBO | VCB = 50V | - | - | 500 | nA |
| Emitter cut-off current | IEBO | VEB = 4V | - | - | 500 | nA |
2109101930_ROHM-DTC114TMT2L_C2889117.pdf
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