Digital Transistor ROHM DTC114TMT2L Featuring Built in Bias Resistors for Easy Circuit Implementation

Key Attributes
Model Number: DTC114TMT2L
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
10kΩ
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114TMT2L
Package:
SOT-723
Product Description

Product Overview

The DTC114T series is a family of NPN digital transistors designed for ease of circuit implementation. Featuring built-in bias resistors, these transistors eliminate the need for external input resistors, simplifying inverter circuit configurations. They are ideal for applications requiring straightforward on/off condition settings, such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA114T series.

Product Attributes

  • Brand: ROHM

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Basic Ordering Unit (pcs) Marking VCEO (V) IC (mA) R1 (k) Power Dissipation (mW) Collector-emitter saturation voltage VCE(sat) (mV) DC current gain hFE Input resistance R1 (k) Transition frequency fT (MHz)
DTC114TM SOT-723 1212 T2L 180 8 8000 04 50 100 10 150*1 -300 (IC = 10mA, IB = 1mA) 100 - 600 (VCE = 5V, IC = 1mA) 7 - 13 250 (VCE = 10V, IE = -5mA, f = 100MHz)
DTC114TEB SOT-416FL 1616 TL 180 8 3000 04 50 100 10 150*1 -300 (IC = 10mA, IB = 1mA) 100 - 600 (VCE = 5V, IC = 1mA) 7 - 13 250 (VCE = 10V, IE = -5mA, f = 100MHz)
DTC114TE SOT-416 1616 TL 180 8 3000 04 50 100 10 150*1 -300 (IC = 10mA, IB = 1mA) 100 - 600 (VCE = 5V, IC = 1mA) 7 - 13 250 (VCE = 10V, IE = -5mA, f = 100MHz)
DTC114TUB SOT-323FL 2021 TL 180 8 3000 04 50 100 10 200*1 -300 (IC = 10mA, IB = 1mA) 100 - 600 (VCE = 5V, IC = 1mA) 7 - 13 250 (VCE = 10V, IE = -5mA, f = 100MHz)
DTC114TUA SOT-323 2021 T106 180 8 3000 04 50 100 10 200*1 -300 (IC = 10mA, IB = 1mA) 100 - 600 (VCE = 5V, IC = 1mA) 7 - 13 250 (VCE = 10V, IE = -5mA, f = 100MHz)
DTC114TKA SOT-346 2928 T146 180 8 3000 04 50 100 10 200*1 -300 (IC = 10mA, IB = 1mA) 100 - 600 (VCE = 5V, IC = 1mA) 7 - 13 250 (VCE = 10V, IE = -5mA, f = 100MHz)

*1 Each terminal mounted on a reference land.

*2 Characteristics of built-in transistor

Absolute Maximum Ratings (Ta = 25C)

Parameter Symbol Value Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Junction temperature Tj 150
Range of storage temperature Tstg -55 to +150

Electrical Characteristics (Ta = 25C)

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base breakdown voltage BVCBO IC = 50A 50 - - V
Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V
Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V
Collector cut-off current ICBO VCB = 50V - - 500 nA
Emitter cut-off current IEBO VEB = 4V - - 500 nA

2109101930_ROHM-DTC114TMT2L_C2889117.pdf

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