Load Switching and Power Management Using PJSEMI PJM2303PSA P Channel Enhancement Mode Power MOSFET
Key Attributes
Model Number:
PJM2303PSA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.5A
RDS(on):
78mΩ@10V,2A
Reverse Transfer Capacitance (Crss@Vds):
41pF@10V
Number:
1 P-Channel
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
372pF@10V
Gate Charge(Qg):
7nC@10V
Mfr. Part #:
PJM2303PSA
Package:
SOT-23
Product Description
Product Overview
The PJM2303PSA is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications requiring efficient load switching, PWM control, and power management. This RoHS and Reach compliant component is halogen and antimony free, offering a moisture sensitivity level of 1.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS and Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 2.5 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 20 | A | ||
| Maximum Power Dissipation | PD | 0.9 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 139 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3,VDS=VGS,ID=-250μA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-10V,ID=-2A | -- | 66 | 78 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=-4.5V,ID=-1.5A | -- | 89 | 105 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=-5V,ID=-1A | -- | 3.9 | -- | S |
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | -- | 372 | -- | pF |
| Output Capacitance | Coss | -- | 50 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 41 | -- | pF | |
| Gate Resistance | RG | VDS=0V,VGS=0V,f=1MHz | -- | 11 | -- | Ω |
| Total Gate Charge | Qg | VDS=-15V,ID=-3A, VGS=-10V | -- | 7 | -- | nC |
| Gate-Source Charge | Qgs | -- | 2 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 1 | -- | nC | |
| Turn-on Delay Time | td(on) | VDD=-15V, ID=-3A, VGS=-10V,RGEN=3Ω | -- | 5 | -- | nS |
| Turn-on Rise Time | tr | -- | 23 | -- | nS | |
| Turn-off Delay Time | td(off) | -- | 21 | -- | nS | |
| Turn-off Fall Time | tf | -- | 30 | -- | nS | |
| Diode Forward Voltage | -VSD | Note3,VGS=0V,IS=-2.5A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | Note2 | -- | -- | 2.5 | A |
2412311540_PJSEMI-PJM2303PSA_C42431760.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
