Load Switching and Power Management Device PJSEMI PJM15P40TE P Channel MOSFET with Low On Resistance
Key Attributes
Model Number:
PJM15P40TE
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
48mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
97.5pF
Number:
1 P-Channel
Output Capacitance(Coss):
106pF
Input Capacitance(Ciss):
1.373nF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
-
Mfr. Part #:
PJM15P40TE
Package:
TO-252
Product Description
Product Overview
The PJM15P40TE is a P-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is designed for applications such as Load Switching, PWM, and Power Management. Key advantages include 100% Avalanche Tested, RoHS Compliance, and being Halogen and Antimony Free. This MOSFET offers a VDS of -40V and an ID of -15A, with low on-resistance characteristics.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
- Marking Code: 15P40 YW
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | -VDS | 40 | V | |||
| Gate-Source Voltage | -VGS | ±20 | V | |||
| Drain Current-Continuous | -ID | 15 | A | |||
| Drain Current-Pulsed | -IDM | Note1 | 60 | A | ||
| Maximum Power Dissipation | PD | 35 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | to | +150 | °C | |
| Thermal Resistance, Junction-to-Case | RθJC | 3.57 | °C/W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 49 | mJ | ||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | -V(BR)DSS | VGS=0V,ID=-250μA | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | -IDSS | VDS=-40V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-10V,ID=-15A | -- | 24 | 35 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=-4.5V,ID=-10A | -- | 32 | 48 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-20V,VGS=0V,f=1MHz | -- | 1373 | -- | pF |
| Output Capacitance | Coss | VDS=-20V,VGS=0V,f=1MHz | -- | 106 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=-20V,VGS=0V,f=1MHz | -- | 97.5 | -- | pF |
| Total Gate Charge | Qg | VDS=-20V,ID=-12A, VGS=-4.5V | -- | 9 | -- | nC |
| Gate-Source Charge | Qgs | VDS=-20V,ID=-12A, VGS=-4.5V | -- | 2.54 | -- | nC |
| Gate-Drain Charge | Qg | VDS=-20V,ID=-12A, VGS=-4.5V | -- | 3.1 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=-15V, RL=1Ω, VGS=-10V, RGEN=3.3Ω | -- | 19.2 | -- | nS |
| Turn-on Rise Time | tr | VDD=-15V, RL=1Ω, VGS=-10V, RGEN=3.3Ω | -- | 12.8 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=-15V, RL=1Ω, VGS=-10V, RGEN=3.3Ω | -- | 48.6 | -- | nS |
| Turn-off Fall Time | tf | VDD=-15V, RL=1Ω, VGS=-10V, RGEN=3.3Ω | -- | 4.6 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | -VSD | VGS=0V,IS=-15A | -- | -- | 1.2 | V |
| Diode Forward Current | -IS | -- | -- | 15 | A | |
| Forward Transconductance | gFS | Note3, VDS=-5V,ID=-2A | -- | 7 | -- | S |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 10 | -- | Ω |
2407301136_PJSEMI-PJM15P40TE_C36493752.pdf
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