Dual P Channel Enhancement Mode MOSFET PJSEMI PJM05DP20DFA Ideal for Load Switching and PWM Circuits
Key Attributes
Model Number:
PJM05DP20DFA
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
2 P-Channel
Output Capacitance(Coss):
-
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
740pF
Gate Charge(Qg):
7.8nC@4.5V
Mfr. Part #:
PJM05DP20DFA
Package:
DFN2x2A-6L
Product Description
Product Overview
The PJM05DP20DFA is a Dual P-Channel Enhancement Mode Power MOSFET designed for high-performance applications. It features low gate charge and a high-density cell design for ultra-low RDS(on), making it suitable for PWM applications, load switching, and power management. This device offers VDS of -20V and ID of -4.5A with RDS(on) as low as 45m at VGS = -4.5V.
Product Attributes
- Brand: PingJingSemi
- Model: PJM05DP20DFA
- Package: DFN2x2A-6L
- Marking Code: 05DP20
- Revision: 1.0
- Date: May-2022
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | -VDS | 20 | V | |||
| VGS | 12 | V | ||||
| -ID | 4.5 | A | ||||
| PD | 1.4 | W | ||||
| TJ | 150 | C | ||||
| TSTG | -55 | +150 | C | |||
| Electrical Characteristics | -V(BR)DSS | VGS=0V,ID=-250A | 20 | -- | -- | V |
| -IDSS | VDS=-20V,VGS=0V | -- | -- | 1 | A | |
| IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA | |
| -VGS(th) | VDS=VGS,ID=-250A | 0.5 | 0.7 | 0.9 | V | |
| RDS(on) | VGS=-4.5V,ID=-3A | -- | 45 | -- | m | |
| RDS(on) | VGS=-2.5V,ID=-2A | -- | 70 | -- | m | |
| gFS | VDS=-5V,ID=-4.1A | -- | 6 | -- | S | |
| -VSD | VGS=0V,IS=-4.1A | -- | -- | 1.2 | V | |
| -IS | -- | -- | 4.5 | A | ||
| Dynamic Characteristics | Ciss | VDS=-4V,VGS=0V,f=1MHz | -- | 740 | -- | pF |
| Coss | -- | 290 | -- | pF | ||
| Crss | -- | 190 | -- | pF | ||
| Switching Characteristics | td(on) | VDD=-4V,RL=1.2,VGS=-4.5V,RGEN=1 | -- | 12 | -- | nS |
| tr | -- | 35 | -- | nS | ||
| td(off) | -- | 30 | -- | nS | ||
| tf | -- | 10 | -- | nS | ||
| Gate Charge | Qg | VDS=-4V,ID=-4.1A, VGS=-4.5V | -- | 7.8 | -- | nC |
| Qgs | -- | 1.2 | -- | nC | ||
| Qgd | -- | 1.6 | -- | nC | ||
| Thermal Characteristics | RJA | Note1 | 89 | C/W |
2410122027_PJSEMI-PJM05DP20DFA_C30187482.pdf
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