Cascode SiC FET transistor Qorvo UJ4C075023K4S 750V 23mW designed for power factor correction modules

Key Attributes
Model Number: UJ4C075023K4S
Product Custom Attributes
Drain To Source Voltage:
750V
Current - Continuous Drain(Id):
66A
Type:
N-Channel
Pd - Power Dissipation:
306W
Mfr. Part #:
UJ4C075023K4S
Product Description

Product Overview

The UJ4C075023K4S is a 750V, 23mW G4 SiC FET designed for high-performance power applications. It features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off device. This design offers standard gate-drive characteristics, allowing it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The UJ4C075023K4S is available in a TO-247-4L package, providing faster switching speeds and cleaner gate waveforms. Its ultra-low gate charge, exceptional reverse recovery characteristics, and low body diode forward voltage make it ideal for switching inductive loads and applications requiring standard gate drive. Typical applications include power factor correction modules, motor drives, induction heating, EV charging, switch mode power supplies, and PV inverters.

Product Attributes

  • Brand: UnitedSiC
  • Package Type: TO-247-4L
  • Technology: SiC FET (Silicon Carbide Field-Effect Transistor)
  • Circuit Configuration: Cascode
  • ESD Protection: HBM class 2 and CDM class C3

Technical Specifications

Parameter Symbol Test Conditions Value Units
Part Number UJ4C075023K4S
Drain-source breakdown voltage BVDS VGS=0V, ID=1mA 750 V
Drain-source on-resistance RDS(on) VGS=12V, ID=40A, TJ=25C 23 mW
Drain-source on-resistance RDS(on) VGS=12V, ID=40A, TJ=175C 29 mW
Gate threshold voltage VG(th) VDS=5V, ID=10mA 4.8 V
Total gate charge QG VDS=400V, ID=40A, VGS = 0V to 15V 37.8 nC
Reverse recovery charge Qrr VR=400V, IS=40A, VGS=0V, RG_EXT=5W, di/dt=3100A/ms, TJ=25C 105 nC
Forward voltage VFSD VGS=0V, IS=20A, TJ=25C 1.23 V
Maximum junction temperature TJ,max 175 C
Operating and storage temperature TJ, TSTG -55 to 175 C
Thermal resistance, junction-to-case RqJC 0.49 C/W
Continuous drain current ID TC = 25C 66 A
Pulsed drain current IDM TC = 25C 196 A
Power dissipation Ptot TC = 25C 306 W
Input capacitance Ciss VDS=400V, VGS=0V, f=100kHz 1400 pF
Output capacitance Coss VDS=400V, VGS=0V, f=100kHz 93 pF
Reverse transfer capacitance Crss VDS=400V, VGS=0V, f=100kHz 2.5 pF

2411272256_Qorvo-UJ4C075023K4S_C6903064.pdf

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