Medium power transistor ROHM 2SC5876U3T106Q with high speed switching and performance in amplification circuits
Key Attributes
Model Number:
2SC5876U3T106Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC5876U3T106Q
Package:
SOT-323
Product Description
Product Overview
The 2SC5876U3 is a medium power transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching capabilities with a typical fall time of 80ns, low saturation voltage (typically 150mV), and strong discharge power for inductive and capacitive loads. This transistor complements the 2SA2088U3 and is suitable for applications requiring fast response and efficient power handling.
Product Attributes
- Brand: ROHM
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit | |
| Collector-base breakdown voltage | BVCBO | IC = 100A | 60 | V | |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 60 | V | |
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | V | |
| Collector current | IC | 500 | mA | ||
| Collector current (Pulsed) | ICP*1 | Pw=10ms | 1.0 | A | |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 200 | mW | |
| Junction temperature | Tj | 150 | |||
| Range of storage temperature | Tstg | -55 to +150 | |||
| Collector cut-off current | ICBO | VCB = 40V | - | 1 | A |
| Emitter cut-off current | IEBO | VEB = 4V | - | 1 | A |
| Collector-emitter saturation voltage | VCE(sat) | IC = 100mA, IB = 10mA | - 150 300 | mV | |
| DC current gain | hFE | VCE = 2V, IC = 50mA | 120 - 390 | - | |
| Transition frequency | fT*3 | VCE = 10V, IE = -100mA, f = 100MHz | - 300 | MHz | |
| Output capacitance | Cob | VCB = 10V, IE = 0mA, f = 1MHz | - 5 | pF | |
| Turn-On time | ton | IC = 500mA, IB1 = 50mA, IB2 = -50mA, VCC 25V, RL = 50 | - 70 | ns | |
| Storage time | tstg | - 130 | ns | ||
| Fall time | tf | - 80 | ns |
2207121430_ROHM-2SC5876U3T106Q_C509800.pdf
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