General purpose low frequency amplifier transistor ROHM 2SD2226KT146V with high current gain and low saturation voltage

Key Attributes
Model Number: 2SD2226KT146V
Product Custom Attributes
Emitter-Base Voltage(Vebo):
12V
Current - Collector Cutoff:
300nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SD2226KT146V
Package:
TO-236-3(SOT-23-3)
Product Description

Product Overview

The 2SD2226K is a general-purpose NPN transistor designed for low-frequency amplifier applications. It features high DC current gain, high emitter-base voltage, and low saturation voltage, making it suitable for various electronic circuits.

Product Attributes

  • Brand: ROHM
  • Package: SOT-346 (SMT3)
  • Marking: BJ

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-base breakdown voltageBVCBOIC = 10A60--V
Collector-emitter breakdown voltageBVCEOIC = 1mA50--V
Emitter-base breakdown voltageBVEBOIE = 10A12--V
Collector cut-off currentICBOVCB = 50V--300nA
Emitter cut-off currentIEBOVEB = 12V--300nA
Collector-emitter saturation voltageVCE(sat)IC = 50mA, IB = 5mA--300mV
DC current gainhFEVCE = 5V, IC = 1mA560-2700-
Transition frequencyfTVCE = 5V, IE = -10mA, f = 100MHz-250-MHz
Output capacitanceCobVCB = 5V, IE = 0A, f = 1kHz-3.5-pF
Collector current (Continuous)IC--150mA
Collector current (Pulse)ICP*1Pw=10ms--200mA
Power dissipationPD*2Each terminal mounted on a reference land.--200mW
Junction temperatureTj--150
Range of storage temperatureTstg-55-+150

2207012015_ROHM-2SD2226KT146V_C3294504.pdf

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