650V 72m Ohm Gallium Nitride GaN FET PQFN Package RENESAS TP65H070G4LSGB-TR Normally Off Device
Key Attributes
Model Number:
TP65H070G4LSGB-TR
Product Custom Attributes
Mfr. Part #:
TP65H070G4LSGB-TR
Package:
PQFN-8(8x8)
Product Description
Product Overview
The TP65H070G4LSGB is a 650V, 72m Gallium Nitride (GaN) FET, designed as a normally-off device. It integrates advanced high voltage GaN HEMT and low voltage silicon MOSFET technologies to deliver superior reliability and performance. Leveraging the Gen IV SuperGaN platform, it utilizes advanced epi and patented design technologies to simplify manufacturing and enhance efficiency over silicon by reducing gate charge, output capacitance, crossover loss, and reverse recovery charge. This FET is suitable for applications requiring increased efficiency in both hard- and soft-switched circuits, leading to higher power density, reduced system size and weight, and lower overall system cost. It is easy to drive with commonly-used gate drivers, and its GSD pin layout aids in high-speed design.
Product Attributes
- Brand: Renesas Electronics
- Technology: Gen IV SuperGaN GaN FET
- Qualification: JEDEC-qualified
- Packaging: PQFN (source tab), RoHS compliant and Halogen-free
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Part Number | VDSS (V) | VDSS(TR) (V) | RDS(on)eff (m) max* | Qoss (nC) typ | QG (nC) typ | Package | Package Configuration |
| TP65H070G4LSGB | 650 | 800 | 85 | 78 | 8.4 | PQFN | Source tab |
| TP65H070G4LSGB-TR | 650 | 800 | 85 | 78 | 8.4 | 8x8 PQFN | Tape and reel |
| Symbol | Parameter | Limit Value | Unit | Test Conditions |
| VDSS | Drain to source voltage | 650 | V | (TJ = -55C to 150C) |
| VDSS(TR) | Transient drain to source voltage | 800 | V | (spike duration <30 s, non-repetitive) |
| VGSS | Gate to source voltage | 20 | V | |
| PD | Maximum power dissipation | 96 | W | @TC=25C |
| ID | Continuous drain current | 29 | A | @TC=25C (b) |
| ID | Continuous drain current | 18.4 | A | @TC=100C (b) |
| IDM | Pulsed drain current | 120 | A | (pulse width: 10s) |
| TC | Operating temperature (Case) | -55 to +150 | C | |
| TJ | Operating temperature (Junction) | -55 to +150 | C | |
| TS | Storage temperature | -55 to +150 | C | |
| TSOLD | Reflow soldering temperature | 260 | C | (c) |
| Symbol | Parameter | Typical | Unit | Test Conditions |
| RJC | Junction-to-case thermal resistance | 1 | C/W | |
| RJA | Junction-to-ambient thermal resistance | 62 | C/W |
| Symbol | Parameter | Min | Typ | Max | Unit | Test Conditions |
| V(BL)DSS | Drain-source voltage | 650 | V | VGS=0V | ||
| VGS(th) | Gate threshold voltage | 3.2 | 4 | 4.6 | V | VDS=VGS, ID=0.7mA |
| RDS(on)eff | Drain-source on-resistance | 72 | 85 | m | VGS=10V, ID=16A,TJ=25C | |
| RDS(on)eff | Drain-source on-resistance | 148 | m | VGS=10V, ID=16A, TJ=150C | ||
| IDSS | Drain-to-source leakage current | 3 | 30 | A | VDS=650V, VGS=0V, TJ=25C | |
| IDSS | Drain-to-source leakage current | 12 | A | VDS=650V, VGS=0V, TJ=150C | ||
| IGSS | Gate-to-source forward leakage current | 100 | nA | VGS=20V | ||
| IGSS | Gate-to-source reverse leakage current | -100 | nA | VGS=-20V | ||
| CISS | Input capacitance | 600 | pF | VGS=0V, VDS=400V, f=1MHz | ||
| COSS | Output capacitance | 74 | pF | VGS=0V, VDS=400V, f=1MHz | ||
| CRSS | Reverse transfer capacitance | 2 | pF | VGS=0V, VDS=400V, f=1MHz | ||
| CO(er) | Output capacitance, energy related | 109 | pF | VGS=0V, VDS=0V to 400V | ||
| CO(tr) | Output capacitance, time related | 200 | pF | VGS=0V, VDS=0V to 400V | ||
| QG | Total gate charge | 8.4 | nC | VDS=400V, VGS=0V to 10V, ID=16A | ||
| QGS | Gate-source charge | 3.3 | nC | VDS=400V, VGS=0V to 10V, ID=16A | ||
| QGD | Gate-drain charge | 2.3 | nC | VDS=400V, VGS=0V to 10V, ID=16A | ||
| QOSS | Output charge | 78 | nC | VGS=0V, VDS=0V to 400V | ||
| tD(on) | Turn-on delay | 27 | ns | VDS=400V, VGS=0V to 12V, ID=16A, RG=50 | ||
| tR | Rise time | 9 | ns | VDS=400V, VGS=0V to 12V, ID=16A, RG=50 | ||
| tD(off) | Turn-off delay | 71 | ns | VDS=400V, VGS=0V to 12V, ID=16A, RG=50 | ||
| tF | Fall time | 6.5 | ns | VDS=400V, VGS=0V to 12V, ID=16A, RG=50 | ||
| IS | Reverse current | 16 | A | VGS=0V, TC=100C, 25% duty cycle | ||
| VSD | Reverse voltage | 2.2 | 2.6 | V | VGS=0V, IS=16A | |
| VSD | Reverse voltage | 1.6 | 1.9 | V | VGS=0V, IS=8A | |
| tRR | Reverse recovery time | 34 | ns | IS=16A, VDD=400V, di/dt=1000A/ms | ||
| QRR | Reverse recovery charge | 0 | nC | IS=16A, VDD=400V, di/dt=1000A/ms | ||
| (di/dt)RDMC | Reverse diode di/dt | 1900 | A/s |
2510261727_RENESAS-TP65H070G4LSGB-TR_C48782923.pdf
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