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quality Low On Resistance Silicon N Channel Power MOSFET RENESAS RJK0851DPB-00J5 80V 20A with LFPAK Package factory
quality Low On Resistance Silicon N Channel Power MOSFET RENESAS RJK0851DPB-00J5 80V 20A with LFPAK Package factory

Low On Resistance Silicon N Channel Power MOSFET RENESAS RJK0851DPB-00J5 80V 20A with LFPAK Package

Key Attributes
Model Number: RJK0851DPB-00#J5
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-40℃~+150℃
RDS(on):
23mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.05nF@10V
Pd - Power Dissipation:
45W
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
RJK0851DPB-00#J5
Package:
SC-100(SOT-669)
Product Description

Renesas RJK0851DPB - 80V, 20A Silicon N Channel Power MOS FET

The Renesas RJK0851DPB is a high-performance Silicon N Channel Power MOS FET designed for power switching applications. It features high-speed switching, low on-resistance, and is capable of 4.5V gate drive with low drive current. Its compact LFPAK package (PTZZ0005DA-A) allows for high-density mounting. This product is Pb-free and Halogen-free, making it suitable for environmentally conscious designs.

Product Attributes

  • Brand: Renesas
  • Package Name: LFPAK
  • Package Code: PTZZ0005DA-A
  • Certifications: Pb-free, Halogen-free

Technical Specifications

ItemSymbolMinTypMaxUnitTest Conditions
Drain to source breakdown voltageV(BR)DSS80VID = 10 mA, VGS = 0 V
Gate to source leak currentIGSS±0.1µAVGS = ±20 V, VDS = 0 V
Zero gate voltage drain currentIDSS1µAVDS = 80 V, VGS = 0 V
Gate to source cutoff voltageVGS(off)1.22.5VVDS = 10 V, ID = 1 mA
Static drain to source on state resistanceRDS(on)1823mΩID = 10 A, VGS = 10 V
Static drain to source on state resistanceRDS(on)2028mΩID = 10 A, VGS = 4.5 V
Forward transfer admittance|yfs|36SID = 10 A, VDS = 10 V
Input capacitanceCiss2050pFVDS = 10 V, VGS = 0 V, f = 1 MHz
Output capacitanceCoss214pF
Reverse transfer capacitanceCrss82pF
Gate ResistanceRg0.7Ω
Total gate chargeQg14nCVDD = 25 V, VGS = 4.5 V, ID = 20 A
Gate to source chargeQgs7.1nC
Gate to drain chargeQgd3.6nC
Turn-on delay timetd(on)8.8nsVGS = 10 V, ID = 10 A, VDD ≈ 30 V, RL = 3 Ω, Rg = 4.7 Ω
Rise timetr4.1ns
Turn-off delay timetd(off)42ns
Fall timetf5.7ns
Body–drain diode forward voltageVDF0.831.1VIF = 20 A, VGS = 0 V
Body–drain diode reverse recovery timetrr34nsIF = 20 A, VGS = 0 V, diF/ dt = 100 A/ µs
Drain to source voltageVDSS80V
Gate to source voltageVGSS±20V
Drain currentID20A
Drain peak currentID(pulse)80APW ≤ 10 µs, duty cycle ≤ 1%
Body-drain diode reverse drain currentIDR20A
Avalanche currentIAP10ATch = 25°C, Rg ≥ 50 Ω
Avalanche energyEAS13.3mJTch = 25°C, Rg ≥ 50 Ω
Channel dissipationPch45WTc = 25°C
Channel to Case Thermal Resistanceθch-C2.78°C/W
Channel temperatureTch150°C
Storage temperatureTstg–55+150°C

Application

  • Switching Mode Power Supply

2312021028_RENESAS-RJK0851DPB-00-J5_C5724900.pdf

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