Low frequency amplification dual transistor ROHM UMX18NTN with reduced mounting costs and board area

Key Attributes
Model Number: UMX18NTN
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
150mW
Transition Frequency(fT):
320MHz
Type:
NPN
Number:
2 NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
UMX18NTN
Package:
SOT-363
Product Description

Product Overview

The EMX18 / UMX18N are general-purpose dual transistors designed for low-frequency amplification and driver applications. They offer independent transistor elements within a single package, reducing interference, mounting costs, and board area. These transistors are compatible with automatic mounting machines.

Product Attributes

  • Brand: ROHM
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Part NumberPackageVCEO (V)IC (mA)Power Dissipation (mW)Junction Temperature (C)Storage Temperature (C)
EMX18SOT-563 (EMT6)12500150150-55 to +150
UMX18NSOT-363 (UMT6)12500150150-55 to +150
ParameterSymbolConditionsMin.Typ.Max.Unit
Collector-base breakdown voltageBVCBOIC = 10A--15V
Collector-emitter breakdown voltageBVCEOIC = 1mA--12V
Emitter-base breakdown voltageBVEBOIE = 10A--6V
Collector cut-off currentICBOVCB = 15V--100nA
Emitter cut-off currentIEBOVEB = 6V--100nA
Collector-emitter saturation voltageVCE(sat)IC = 200mA, IB = 10mA-90250mV
DC current gainhFEVCE = 2V, IC = 10mA270-680-
Transition frequencyfTVCE = 2V, IE = -10mA, f = 100MHz-320-MHz
Output capacitanceCobVCB = 10V, IE = 0A, f = 1MHz-7.5-pF

2207141800_ROHM-UMX18NTN_C510066.pdf

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