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quality Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management factory
quality Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management factory
quality Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management factory
quality Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management factory

Silicon Carbide Power MOSFET SGKS KM040120-R Designed for Enhanced Efficiency and Thermal Management

Key Attributes
Model Number: KM040120-R
Product Custom Attributes
Mfr. Part #:
KM040120-R
Package:
TO-247-3L
Product Description

Product Overview

This Silicon Carbide Power MOSFET features high breakdown voltage and low on-resistance, enabling high switching speeds and low capacitance. It includes a fast-recovery body diode with low reverse recovery charge. Designed for enhanced system efficiency, reduced thermal requirements, and improved power density, this component is ideal for applications requiring high switching frequencies and parallel operation. It is halogen-free and compliant with standards.

Product Attributes

  • Brand: Gokeic
  • Material: Silicon Carbide (SiC)
  • Certifications: Halogen-free, compliant with standards

Technical Specifications

ParameterSymbolValueUnitTest ConditionsRemarks
Maximum Ratings
Drain-Source VoltageVDS1200V
Gate-Source Voltage (Dynamic)VGS(dyn)V
Gate-Source Voltage (Static)VGS(stat)V
Continuous Drain CurrentID@2570A
Pulsed Drain CurrentIDMA
Power DissipationPDW
Operating and Storage TemperatureTJ, TSTG
Electrical Characteristics
Drain-Source Breakdown VoltageV(BR)DSS1200VVGS = 0V, ID = 1mA
Gate Threshold VoltageVGS(th)VVDS = 20V, ID = 1mA
Zero Gate Voltage Drain CurrentIDSSmAVDS = 1200V, VGS = 0V
Gate Source Leakage CurrentIGSSmAVDS = 0V, VGS = 20V
Drain-Source On-ResistanceRDS(on)40mVGS = 18V, ID = 35A
Forward TransconductancegfsSVDS = 50V, ID = 35A
Single Avalanche EnergyEASmJID = 35A, VDD = 100V, RG = 25
Input CapacitanceCisspFVDS = 100V, VGS = 0V, f = 1MHz
Output CapacitanceCosspFVDS = 100V, VGS = 0V, f = 1MHz
Transfer CapacitanceCrsspFVDS = 100V, VGS = 0V, f = 1MHz
Output Capacitance Stored EnergyEossJVDS = 400V, VGS = 0V
Body Diode Conduction Turn-on EnergyEon_bodyJID = 35A, VGS = 0V, VDD = 400V
Body Diode Conduction Turn-off EnergyEoff_bodyJID = 35A, VGS = 0V, VDD = 400V
Turn-on Delay Timetd(on)nsVGS = 18V, ID = 35A, RL = 11.4
Rise TimetrnsVGS = 18V, ID = 35A, RL = 11.4
Turn-off Delay Timetd(off)nsVGS = 18V, ID = 35A, RL = 11.4
Fall TimetfnsVGS = 18V, ID = 35A, RL = 11.4
Intrinsic Gate ResistanceRg
Gate-Source ChargeQgnCVDS = 100V, ID = 35A
Gate-Drain ChargeQgdnCVDS = 100V, ID = 35A
Total Gate ChargeQg(tot)nCVDS = 100V, ID = 35A
Diode Characteristics
Diode Forward VoltageVSDVIS = 35A, VGS = 0V
Diode Continuous Forward CurrentISA
Diode Pulsed Forward CurrentISMA
Reverse Recovery TimetrrnsIS = 35A, VGS = 0V, VDD = 400V
Reverse Recovery ChargeQrrnCIS = 35A, VGS = 0V, VDD = 400V
Reverse Recovery Peak CurrentIrrmAIS = 35A, VGS = 0V, VDD = 400V
Thermal Resistance
Junction-to-Case Thermal ResistanceRthJC/W
Junction-to-Ambient Thermal ResistanceRthJA/W

2411071045_SGKS-KM040120-R_C42377507.pdf

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