Dual digital transistor ROHM UMB10NTN designed for automatic mounting and compact inverter interface applications
Key Attributes
Model Number:
UMB10NTN
Product Custom Attributes
Output Voltage(VO(on)):
300mV@5mA,0.25mA
Input Resistor:
2.2kΩ
Resistor Ratio:
21
Number:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMB10NTN
Package:
SOT-363(UMT6)
Product Description
Product Overview
The EMB10 / UMB10N / IMB10A series are general-purpose dual digital transistors. These devices integrate two DTA123J chips within a single package, offering significant advantages in terms of reduced mounting cost and area by half. Their independent transistor elements ensure no interference, making them suitable for applications like inverters, interfaces, and drivers. These transistors are designed for automatic mounting machines, facilitating efficient production.
Product Attributes
- Brand: ROHM
- Product Type: Dual Digital Transistor
Technical Specifications
| Model | Package | Package Size | Taping Code | Reel Size (mm) | Tape Width (mm) | Basic Ordering Unit (pcs) | Marking |
|---|---|---|---|---|---|---|---|
| EMB10 | SOT-563 (EMT6) | 1616 | T2R | 180 | 8 | 8000 | B10 |
| UMB10N | SOT-363 (UMT6) | 2021 | TN | 180 | 8 | 3000 | B10 |
| IMB10A | SOT-457 (SMT6) | 2928 | T110 | 180 | 8 | 3000 | B10 |
| Parameter | Symbol | Conditions | Values (Min) | Values (Typ) | Values (Max) | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Supply voltage | VCC | -50 | V | |||
| Input voltage | VIN | -12 | 5 | V | ||
| Output current | IO | -100 | mA | |||
| Collector current | IC(MAX)*1 | -100 | mA | |||
| Power dissipation | PD*2*3 | EMB10 | 150 | mW | ||
| Power dissipation | PD*2*3 | UMB10N | 150 | mW | ||
| Power dissipation | PD*2*4 | IMB10A | 300 | mW | ||
| Junction temperature | Tj | 150 | ||||
| Range of storage temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics (Ta = 25C) <For DTr1 and DTr2 in common> | ||||||
| Input voltage (OFF) | VI(off) | VCC = -5V, IO = -100A | -0.5 | V | ||
| Input voltage (ON) | VI(on) | VO = -0.3V, IO = -5mA | -1.1 | V | ||
| Output voltage (ON) | VO(on) | IO = -5mA, II = -0.25mA | -100 | -300 | mV | |
| Input current | II | VI = -5V | -3.6 | mA | ||
| Output current (OFF) | IO(off) | VCC = -50V, VI = 0V | -500 | nA | ||
| DC current gain | GI | VO = -5V, IO = -10mA | 80 | - | ||
| Input resistance | R1 | 2.2 | k | |||
| Resistance ratio | R2/R1 | 17 | 21 | 26 | - | |
| Transition frequency | fT*1 | VCE = -10V, IE = 5mA, f = 100MHz | 250 | MHz | ||
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
1806141831_ROHM-UMB10NTN_C79622.pdf
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