86--136 6733 2386
quality Built in Bias Resistor NPN Digital Transistor ROHM DTC143XU3T106 for Driver and Interface Circuits factory
quality Built in Bias Resistor NPN Digital Transistor ROHM DTC143XU3T106 for Driver and Interface Circuits factory
quality Built in Bias Resistor NPN Digital Transistor ROHM DTC143XU3T106 for Driver and Interface Circuits factory
quality Built in Bias Resistor NPN Digital Transistor ROHM DTC143XU3T106 for Driver and Interface Circuits factory

Built in Bias Resistor NPN Digital Transistor ROHM DTC143XU3T106 for Driver and Interface Circuits

Key Attributes
Model Number: DTC143XU3T106
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
4.7kΩ
Resistor Ratio:
2.6
Number:
1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC143XU3T106
Package:
SC-70(SOT-323)
Product Description

Product Overview

The DTC143X series is a line of NPN digital transistors designed for efficient circuit configuration. These transistors feature built-in biasing resistors (R1 = 4.7k, R2 = 10k), simplifying inverter circuit design by eliminating the need for external input resistors. This integration makes circuit design straightforward, requiring only the setting of on/off conditions for operation. The series is suitable for applications including inverters, interfaces, and drivers, and offers complementary PNP types in the DTA143X series.

Product Attributes

  • Brand: ROHM
  • Product Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)
  • Complementary PNP Types: DTA143X series

Technical Specifications

Model Package Package Size Taping Code Reel Size (mm) Tape Width (mm) Quantity (pcs) Marking
DTC143XM SOT-723 1212 T2L 180 8 8000 43
DTC143XEB SOT-416FL 1616 TL 180 8 3000 43
DTC143XE3 SOT-416 1616 TL 180 8 3000 43
DTC143XUB SOT-323FL 2021 TL 180 8 3000 43
DTC143XU3 SOT-323 2021 T106 180 8 3000 43
DTC143XKA SOT-346 2928 T146 180 8 3000 43
Parameter Symbol Conditions Min. Typ. Max. Unit
Supply voltage VCC 50 V
Input voltage VIN -7 20 V
Output current IO 100 mA
Collector current IC(MAX)*1 100 mA
Power dissipation PD*2 DTC143XM 150 mW
Power dissipation PD*2 DTC143XEB 150 mW
Power dissipation PD*2 DTC143XE3 150 mW
Power dissipation PD*2 DTC143XUB 200 mW
Power dissipation PD*2 DTC143XU3 200 mW
Power dissipation PD*2 DTC143XKA 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Input voltage (off) VI(off) VCC = 5V, IO = 100A 0.3 V
Input voltage (on) VI(on) VO = 0.3V, IO = 20mA 2.5 V
Output voltage (on) VO(on) IO = 10mA, II = 0.5mA 100 300 mV
Input current II VI = 5V 1.8 mA
Output current (off) IO(off) VCC = 50V, VI = 0V 500 nA
DC current gain GI VO = 5V, IO = 10mA 30 - -
Input resistance R1 3.29 4.7 6.11 k
Resistance ratio R2/R1 1.7 2.1 2.6 -
Transition frequency fT*1 VCE = 10V, IE = -5mA, f = 100MHz 250 - MHz

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.


2412111059_ROHM-DTC143XU3T106_C17699139.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version factory
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification factory
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.