Power Management Device REASUNOS RSS04065D Silicon Carbide Schottky Diode with High Speed Switching
Key Attributes
Model Number:
RSS04065D
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
26A
Operating Junction Temperature Range:
-55℃~+175℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.8V@4A
Reverse Leakage Current (Ir):
20uA@650V
Current - Rectified:
4.8A
Mfr. Part #:
RSS04065D
Package:
TO-252
Product Description
Product Overview
The RSS04065D is a Silicon Carbide Schottky Diode designed for applications requiring efficient power management. It features low forward voltage drop, high-speed switching, and a positive temperature coefficient, ensuring stable performance across various operating conditions. This diode is ideal for Power Factor Correction, Sever Mode Power Supplies, and Uninterruptible Power Supplies.
Product Attributes
- Brand: Reasunos
- Material: Silicon Carbide
- Package: TO-252
Technical Specifications
| Part Number | Package | Marking | Packing | Qty. | VRRM (V) | IF (A) | QC (nC) | VRSM (V) | VR (V) | IFSM (A) | IF,Max (A) | IFRM (A) | Ptot (W) | It (AS) | TJ,TSTG () | VF (V) | IR (A) | C (pF) | Qc (nC) | Ec (J) | RJC (/W) |
| RSS04065D | TO-252 | RSS04065D | Tape&reel | 2500 PCS | 650 | 4.8 (TC=150) | 9.5 | 650 | 650 | 26 (TC=25, tp=10ms Half Sine Wave) | 200 (TC=25C, tP=10 s, Pulse) | 20 (TC=25, tp=10ms Half Sine Wave) | 76.5 (TC=25) / 33.2 (TC=110) | 3.3 (TC=25,tp=10ms) | -55 to175 | 1.5 (IF=4A, TJ=25) / 1.8 (IF=4A, TJ=175) | 1 (VR=650V, TJ=25) / 20 (VR=650V, TJ=175) | 185 (VR=0V, TJ=25, f=1MHz) / 19.0 (VR=200V, TJ=25, f=1MHz) / 16.7 (VR=400V, TJ=25, f=1MHz) | 9.5 (VR=400V,TJ=25) | 2.4 (VR=400V) | 1.96 |
2509121150_REASUNOS-RSS04065D_C51904719.pdf
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