power transistor Shenzhen ruichips Semicon RU40L10L featuring low on resistance and high avalanche capability
Key Attributes
Model Number:
RU40L10L
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
32A
Operating Temperature -:
-
RDS(on):
35mΩ@4.5V,8A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Input Capacitance(Ciss):
2.31nF
Output Capacitance(Coss):
250pF
Pd - Power Dissipation:
52W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
RU40L10L
Package:
TO-252
Product Description
Product Overview
The RU40L10L is a P-Channel Advanced Power MOSFET from Ruichips Semiconductor. It features a -40V drain-source voltage, -32A continuous drain current, and low on-state resistance (RDS(ON)) of 20m typ. at VGS=-10V. This MOSFET is designed with a super high dense cell structure, ESD protection, and is 100% avalanche tested, making it reliable and rugged. It is suitable for applications such as power supplies and inverters.
Product Attributes
- Brand: Ruichips
- Product Name: RU40L10L
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
- Package: TO252
Technical Specifications
| Symbol | Parameter | Test Condition | Unit | Min. | Typ. | Max. |
| VDSS | Drain-Source Voltage | V | -40 | |||
| VGSS | Gate-Source Voltage | V | 20 | |||
| TJ | Maximum Junction Temperature | C | 175 | |||
| TSTG | Storage Temperature Range | C | -55 | 175 | ||
| ID | Continuous Drain Current | VGS=-10V, TC=25C | A | -32 | ||
| ID | Continuous Drain Current | VGS=-10V, TC=100C | A | -23 | ||
| IDP | 300s Pulse Drain Current | TC=25C | A | -120 | ||
| PD | Maximum Power Dissipation | TC=25C | W | 52 | ||
| PD | Maximum Power Dissipation | TC=100C | W | 26 | ||
| RJC | Thermal Resistance-Junction to Case | C/W | 2.9 | |||
| EAS | Avalanche Energy, Single Pulsed | mJ | 144 | |||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, IDS=-250A | V | -40 | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-40V, VGS=0V | A | -1 | ||
| IDSS | Zero Gate Voltage Drain Current | TJ=85C | A | -30 | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, IDS=-250A | V | -1.0 | -1.8 | -2.5 |
| IGSS | Gate Leakage Current | VGS=20V, VDS=0V | A | 10 | ||
| RDS(ON) | Drain-Source On-state Resistance | VGS=-10V, IDS=-10A | m | 20 | 25 | |
| RDS(ON) | Drain-Source On-state Resistance | VGS=-4.5V, IDS=-8A | m | 30 | 35 | |
| VSD | Diode Forward Voltage | ISD=-1A, VGS=0V | V | -0.75 | -1 | |
| trr | Reverse Recovery Time | ISD=-1A, dlSD/dt=100A/s | ns | 36 | ||
| Qrr | Reverse Recovery Charge | ISD=-1A, dlSD/dt=100A/s | nC | 28 | ||
| Ciss | Input Capacitance | VGS=0V, VDS=-20V, F=1.0MHz | pF | 2310 | ||
| Coss | Output Capacitance | VGS=0V, VDS=-20V, F=1.0MHz | pF | 250 | ||
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=-20V, F=1.0MHz | pF | 165 | ||
| td(ON) | Turn-on Delay Time | VDD=-20V, RL=0.66, IDS=-30A, VGEN=-10V, RG=6 | ns | 15 | ||
| tr | Turn-on Rise Time | ns | 23 | |||
| td(OFF) | Turn-off Delay Time | ns | 43 | |||
| tf | Turn-off Fall Time | ns | 17 | |||
| Qg | Total Gate Charge | VDS=-32V, VGS=-10V, IDS=-30A | nC | 45 | ||
| Qgs | Gate-Source Charge | nC | 8 | |||
| Qgd | Gate-Drain Charge | nC | 15 |
Ordering and Marking Information
| Device | Marking | Package | Packaging | Quantity | Reel Size | Tape width |
| RU40L10L | RU40L10L | TO-252 | Tape&Reel | 2500 | 13 | 16mm |
2409302202_Shenzhen-ruichips-Semicon-RU40L10L_C180963.pdf
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